Zobrazeno 1 - 10
of 91
pro vyhledávání: '"M. Ozaita"'
Publikováno v:
Metrologia. 60:04003
Main text In this supplementary comparison depths of six v-shaped grooves with nominal values 5/20/50/200/600 and 900 μm were measured. The depths were measured according to ISO 5436-1. The PTB nickel depth setting standard was used as reference sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6d6c7e75700c02d25288b1217558377
https://doi.org/10.1088/0026-1394/60/1a/04003
https://doi.org/10.1088/0026-1394/60/1a/04003
Congestible goods describe situations in which a group of people share or use a public good that becomes congested or overexploited when demand is low. We study experimentally a congestible goods problem of relevance for parking design, namely how pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2127::3fdba385d72d881777576e547dfd1662
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3056321
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3056321
Akademický článek
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Publikováno v:
IEEE Electron Device Letters. 18:495-498
A simple two-terminal cyclic current-voltage (I-V) measuring approach is used to monitor damage in gate definition plasma etching of poly-Si gate 70 /spl Aring/ oxide MOS structures. This new technique is used to identify the presence of trapping and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6adbbc8dbe646e854c3b7e9013534e75
https://doi.org/10.1109/55.624931
https://doi.org/10.1109/55.624931
Publikováno v:
Microelectronic Engineering. 28:47-50
The interactions of hydrogen with plasma-charging induced defects have been examined using 0.5 μm n-channel LDD MOSFETs fabricated on p-type Si by employing Cl2/HBr-based chemistries and CHF3/CF4-based chemistries polycrystalline Si gate definition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da6cf38e45a78bd7d1b4cc4ad3e5f489
https://doi.org/10.1016/0167-9317(95)00013-x
https://doi.org/10.1016/0167-9317(95)00013-x
Publikováno v:
Proceedings of 1st International Symposium on Plasma Process-Induced Damage.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b28e2b68b9693f41b679331301e3fc9
https://doi.org/10.1109/ppid.1996.715208
https://doi.org/10.1109/ppid.1996.715208
Autor:
Bansal, Yashika1 (AUTHOR), Codeluppi, Sierra A.1,2 (AUTHOR), Banasr, Mounira1,2,3 (AUTHOR) mounira.banasr@camh.ca
Publikováno v:
International Journal of Molecular Sciences. Jun2024, Vol. 25 Issue 12, p6357. 21p.
Autor:
Estrada-Reyes, Yoana, Cervantes-Alfaro, José Miguel, López-Vázquez, Miguel Ángel, Olvera-Cortés, María Esther
Publikováno v:
Frontiers in Pharmacology; 2024, p1-17, 17p
Autor:
Chaki, Shigeyuki1 (AUTHOR) s-chaki@taisho.co.jp, Watanabe, Mai2 (AUTHOR)
Publikováno v:
European Archives of Psychiatry & Clinical Neuroscience. Oct2023, Vol. 273 Issue 7, p1451-1462. 12p. 2 Diagrams, 3 Charts.
Autor:
López-Terrones, Elena1,2,3 (AUTHOR), Paz, Verónica1,2 (AUTHOR), Campa, Leticia1,2 (AUTHOR), Conde-Berriozabal, Sara3,4,5 (AUTHOR), Masana, Mercè3,4,5 (AUTHOR), Artigas, Francesc1,2,3 (AUTHOR), Riga, Maurizio S.6 (AUTHOR) mauririga@gmail.com
Publikováno v:
International Journal of Molecular Sciences. Mar2023, Vol. 24 Issue 5, p4891. 19p.