Zobrazeno 1 - 10
of 96
pro vyhledávání: '"M. Oszwałdowski"'
Autor:
M. Oszwałdowski, Semir El-Ahmar
Publikováno v:
The Review of scientific instruments. 89(1)
We have recently described the principle of operation of a double Hall sensor structure (DHSS) reducing the voltage offset [M. Oszwaldowski and S. El-Ahmar, Rev. Sci. Instrum. 88, 075005 (2017)]. The correctness of operation of the structure and its
Autor:
Semir El-Ahmar, M. Oszwałdowski
Publikováno v:
The Review of scientific instruments. 88(7)
In this paper, we report on the double Hall sensor structure (DHSS) in which the voltage offset can be effectively reduced. The DHSS is composed of two standard Hall sensors that are activated with two currents from electrically independent current s
Publikováno v:
Journal of Applied Physics. 125:104502
In this paper, we show that the very large offset voltage observed in Hall sensors exploiting the epitaxial graphene on an SiC substrate can be reduced quite effectively with the help of the double Hall sensor structure (DHSS). A record offset reduct
Publikováno v:
Acta Physica Polonica A. 121:959-962
A new version of the construction of the extraordinary magnetoresistance e ect (EMR) based magnetic sensor has been proposed [2]. The di erences between the original three dimensional (3D) construction and proposed 2D (planar) construction are presen
Publikováno v:
Sensors (Basel, Switzerland)
Sensors; Volume 11; Issue 1; Pages: 876-885
Sensors, Vol 11, Iss 1, Pp 876-885 (2011)
Sensors; Volume 11; Issue 1; Pages: 876-885
Sensors, Vol 11, Iss 1, Pp 876-885 (2011)
We report on the preparation of the first complete extreme temperature Hall sensor. This means that the extreme-temperature magnetic sensitive semiconductor structure is built-in an extreme-temperature package especially designed for that purpose. Th
Autor:
Tomasz Berus, M. Oszwałdowski
Publikováno v:
Sensors and Actuators A: Physical. 136:234-237
In this contribution we report on the preparation of high temperature Hall sensors (HTHS). The maximum working temperature of the sensors is not less than 573 K (300 °C). The HTHS active element is a heavily n-doped InSb layer epitaxially grown on G
Autor:
M. Oszwałdowski, Wojciech Winiarski, Krzysztof Trzcinka, Oleg Petruk, Maciej Kachniarz, Roman Szewczyk, Tymoteusz Ciuk, Wlodek Strupinski, Jacek Salach
Publikováno v:
Advances in Intelligent Systems and Computing ISBN: 9783319158341
Progress in Automation, Robotics and Measuring Techniques, 3
Progress in Automation, Robotics and Measuring Techniques, 3
Paper presents the results of investigation of the temperature influence on the basic functional properties of graphene Hall-effect sensors. The measurement system utilizing Helmholtz coils as a source of external magnetic field and environmental cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c2f1e64ec4fd82347d281d03bfacb80
https://doi.org/10.1007/978-3-319-15835-8_13
https://doi.org/10.1007/978-3-319-15835-8_13
Autor:
Tymoteusz Ciuk, M. Oszwałdowski, Krzysztof Trzcinka, Roman Szewczyk, Oleg Petruk, Jacek Salach, Maciej Kachniarz, Wlodek Strupinski, Wojciech Winiarski
Publikováno v:
Advances in Intelligent Systems and Computing ISBN: 9783319158341
Paper presents the results of investigation of the influence of protective layer on the basic functional properties of experimental graphene Hall-effect sensors. Both monolayer and bilayer type of graphene structure was investigated under external ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a9062e09942148aba547028ca4b6781
https://doi.org/10.1007/978-3-319-15835-8_12
https://doi.org/10.1007/978-3-319-15835-8_12
Publikováno v:
Acta Physica Polonica A. 93:437-441
Manipulation of atoms or molecules with scanning probe microscopy and its application to the development of novel devices or novel memory systems have been studied extensively [1-4]. In particular, with a scanning tunneling microscope (STM) single at
Publikováno v:
Acta Physica Polonica A. 87:345-348
To analyse the electronic properties of semiconductor superlattices (SLs) or quantum wells (QWs) it is necessary to know the basic parameters of the layers of which the structures are composed: the band gaps, effective masses parallel to the interfac