Fabrication of air-bridge sub-micron Schottky junctions on Ge/SOI for THz detection

Autor: R. Bagni 1, E. Giovine 2, S. Carta 2, A. Di Gaspare 2, R. Casini 2, 3, M. Ortolani 3, 4, V. Foglietti 2, F. Evangelisti 1, A. Notargiacomo 2

Publikováno v: Microelectronic engineering Volume 110 (2013): 470–473. doi:10.1016/j.mee.2013.04.017
info:cnr-pdr/source/autori:R. Bagni 1, E. Giovine 2, S. Carta 2, A. Di Gaspare 2, R. Casini 2, 3, M. Ortolani 3, 4, V. Foglietti 2, F. Evangelisti 1, A. Notargiacomo 2,/titolo:Fabrication of air-bridge sub-micron Schottky junctions on Ge%2FSOI for THz detection/doi:10.1016%2Fj.mee.2013.04.017/rivista:Microelectronic engineering/anno:2013/pagina_da:470/pagina_a:473/intervallo_pagine:470–473/volume:Volume 110

We report on the fabrication and electrical characterization of Schottky diodes on epitaxial relaxed germanium for THz detection, which implement both a sub-micron junction area and the air-bridge technology. The small footprint necessary for low cap

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c43d8eb89500a5ca52c111f9ce389fe0
https://doi.org/10.1016/j.mee.2013.04.017