Zobrazeno 1 - 10
of 13
pro vyhledávání: '"M. Omar Manasreh"'
Publikováno v:
MRS Advances. 5:2273-2280
Photodetectors based on a hybrid structure of graphene sensitized with lead selenide (PbSe) colloidal quantum dots (QDs) effective in the near-infrared (NIR) region with high responsivity were investigated. Colloidal PbSe nanocrystals were synthesize
Publikováno v:
Applied Physics A. 127
Copper oxide thin films are grown using copper nanofilms oxidized at high annealing temperatures. The thin film crystallinity and surface morphology are probed using the X-ray diffractometer and scanning electron microscopy, indicating that the cryst
Memristors Based on Hybrid Structures of Metal-Oxide Quantum Dots and Thin Films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c392a01ea8c86a9990dbe37fbac66107
Autor:
Wafaa Gebril, M. Omar Manasreh
Publikováno v:
Engineering Research Express. 3:015018
A few layers graphene-based phototransistor was fabricated and investigated. Graphene layers were mechanically exfoliated and transferred into a p-doped Si/SiO2 substrate to fabricate a graphene field effect transistor. Gold electrodes were deposited
Publikováno v:
IEEE Transactions on Nanotechnology. 15:109-112
Lead selenide nanocrystals were coupled with the interdigital gold electrodes to create a dissimilar material that is used for detecting near-infrared light at room temperature. The photoluminescence spectrum of the nanocrystals showed a narrow peak
Publikováno v:
Optical Review. 19:235-237
Thin film heterojuction of the type p-ZnO/n-GaN was prepared by spray pyrolysis and electron beam evaporation technique, respectively. Hall measurements demonstrate the firm p-type conductivity of the p-doped ZnO film. The structural and electrical p
Autor:
M. Omar Manasreh, Vitaliy G. Dorogan, Zhiming Wang, Eric A. DeCuir, Gregory J. Salamo, Alvason Zhenhua Li, Dali Shao, Shibin Li, Jiang Wu, Yuriy I. Mazur
Publikováno v:
Nano letters. 10(4)
Normal incident photodetection at mid infrared spectral region is achieved using the intersublevel transitions from strain-free GaAs quantum dot pairs in Al(0.3)Ga(0.7)As matrix. The GaAs quantum dot pairs are fabricated by high temperature droplet e
Autor:
Gregory J. Salamo, C. L. Workman, Qiaoying Zhou, M. Omar Manasreh, Christi E. George, Wenquan Ma, R. Panneer Selvam, Zhiming Wang
Publikováno v:
MRS Proceedings. 744
We report on intersubband transitions in InxGa1-xAs/AlGaAs multiple quantum wells (MQWs) grown by molecular beam epitaxy. The conduction band offset for this material system is larger than that of the well known GaAs/AlGaAs system, thus making it pos
Publikováno v:
Materials for Infrared Detectors.
Intersubband transition in 3-Me He+-ion or 1 MeV proton irradiated GaAs/AlGaAs multiple quantum wells were studied using optical absorption technique. The intersubband transitions in 3MeV He+-ion irradiated were completely depleted in samples irradia
Autor:
F.D. Auret, M. Babiker, C.R. Bennett, J.C. Culbertson, Nora V. Edwards, M. Fatemi, S.A. Goodman, R.L. Henry, H.X. Jiang, M. Kamińska, D.D. Koleske, J.Y. Lin, M. Omar Manasreh, M. Palczewska, Bernd Rauschenbach, B.K. Ridley, S. Ruvimov, K. Saarinen, John T. Torvik, M.E. Twigg, A.E. Wickenden, N.A. Zakhleniuk
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34d227d55d103102a4bc1e0df3e3986a
https://doi.org/10.1016/b978-044450630-6/50001-5
https://doi.org/10.1016/b978-044450630-6/50001-5