Zobrazeno 1 - 10
of 76
pro vyhledávání: '"M. Okushima"'
Publikováno v:
Materials at High Temperatures. 34:473-481
A thick section plate specimen of a completely refined Gr.91 steel plate met the requirements of ASME code concerning the toughness and creep strengths due to exact control of the chemical composit...
Autor:
S. Nakano, E. Nishikawa, R. Takagi, Hiroshi Miyamoto, Aizo Matsushiro, Tomoyuki Miyashita, M. Okushima
Publikováno v:
Marine Biotechnology. 2:409-418
Calcified shell layer is composed of two polymorphs of CaCO(3), aragonite or calcite, and an organic matrix. The organic matrix consists of EDTA-soluble and insoluble fractions. These fractions are thought to regulate the formation of the elaborate s
Publikováno v:
2009 IEEE Radio Frequency Integrated Circuits Symposium.
A dual-feedback topology to extend bandwidth of resistive feedback LNAs is proposed in this paper. Active source follower shunt-shunt feedback using a shunt peaking inductor to extend the 3-dB and input matching bandwidth is employed, combined with s
Autor:
M. Okushima, Piet Wambacq, Guido Groeseneken, P. Jansen, Jonathan Borremans, Dimitri Linten, Steven Thijs, Mirko Scholz
Publikováno v:
CICC
Charged device model (CDM) electrostatic discharge (ESD) stress is a major concern for inductor-based ESD protection strategies for RF circuits processed in advanced nano-CMOS technologies. The CDM robustness of such protection methodology is investi
Autor:
M. Okushima, Y. Morishita
Publikováno v:
2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).
A low-leakage SCR design using trigger-PMOS modulations is proposed for ESD protection. By using the SCR design, a leakage current less than 10-13A was achieved together with a trigger voltage, VtI=1.8 V, and ESD performances 5.5 kV HBM and 300 V MM
Publikováno v:
2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).
This paper describes a layout technique to alleviate soft failure for short pitch multi finger ggMOS devices. Forming metal path parallel to the finger achieved 17-30% improvement in soft failure current without area penalty. Improvement of heat diss
Publikováno v:
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).
An ESD protection scheme for 130 nm CMOS LSI is presented. To satisfy both small area requirement for I/O buffer and thin oxide protection capability for power line, we propose an ESD protection scheme using CMOS compatible vertical NPN structure. A
Publikováno v:
Biotechnology and applied biochemistry. 27(2)
We have constructed a hybrid protein (ATFHI) consisting of an N-terminal fragment from urokinase (ATF) and HI-8, which is the C-terminal domain of urinary trypsin inhibitor. The fusion genes for the hybrid proteins were engineered by PCR and cloned i
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.