Zobrazeno 1 - 10
of 138
pro vyhledávání: '"M. Ohnemus"'
Akademický článek
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Autor:
Maqsood, Fozia1,2 (AUTHOR), Al-Rawi, Sawsan S.3 (AUTHOR), Ibrahim, Ahmad H.4 (AUTHOR), Jamil, Faisal1,2 (AUTHOR), Zafar, Ayesha1,2 (AUTHOR), Iqbal, Muhammad Adnan1,2 (AUTHOR) adnan.iqbal@uaf.edu.pk, Shoukat, Umar Sohail1,2 (AUTHOR), Asad, Mohammad5 (AUTHOR), Zia, Sami Ullah1 (AUTHOR), Ahmad, Farhan1 (AUTHOR), Atif, Muhammad6 (AUTHOR)
Publikováno v:
Reviews in Inorganic Chemistry. Aug2024, p1. 22p. 9 Illustrations.
Autor:
Dainese-Marque, Océane1 (AUTHOR), Garcia, Virginie1 (AUTHOR), Andrieu-Abadie, Nathalie1 (AUTHOR) nathalie.andrieu@inserm.fr, Riond, Joëlle1 (AUTHOR) nathalie.andrieu@inserm.fr
Publikováno v:
International Journal of Molecular Sciences. Aug2024, Vol. 25 Issue 16, p8813. 27p.
Autor:
M. Ohnemus, S. Boguth, R. Schreiter, T.F. Meister, J. Bock, L. Treitinger, M. Rest, M. Wurzer, Herbert Knapp, K. Aufinger
Publikováno v:
International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
A production-near implanted base silicon bipolar technology for mixed analogue and digital applications has been developed. The applicability for mobile communications up to at least 6 GHz and for high-speed data links in the range of 10-40 Gbit/s is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f03fc5c32d93d052e4c588143d22cd63
https://doi.org/10.1109/iedm.1999.824214
https://doi.org/10.1109/iedm.1999.824214
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
The authors present a 0.8 mu m BiCMOS technology for high-performance digital applications. The underlying optimization strategy to trade off both bipolar vs. CMOS speed and cutoff-frequency vs. collector-emitter breakdown voltage is described. Based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f434e2f7c0480faed9fb812132adf4b
https://doi.org/10.1109/iedm.1991.235417
https://doi.org/10.1109/iedm.1991.235417
Autor:
Schulz, Nicolas Alexander1 (AUTHOR) n.schulz@uke.de, Carus, Jasmin2 (AUTHOR), Wiederhold, Alexander Johannes1 (AUTHOR), Johanns, Ole3 (AUTHOR), Peters, Frederik3 (AUTHOR), Rath, Natalie4 (AUTHOR), Rausch, Katharina4 (AUTHOR), Holleczek, Bernd4 (AUTHOR), Katalinic, Alexander5 (AUTHOR), Nennecke, Alice (AUTHOR), Kusche, Henrik (AUTHOR), Heinrichs, Vera (AUTHOR), Eberle, Andrea (AUTHOR), Luttmann, Sabine (AUTHOR), Abnaof, Khalid (AUTHOR), Kim-Wanner, Soo-Zin (AUTHOR), Handels, Heinz (AUTHOR), Germer, Sebastian (AUTHOR), Halber, Marco (AUTHOR), Richter, Martin (AUTHOR)
Publikováno v:
BMC Medical Research Methodology. 6/22/2024, Vol. 24 Issue 1, p1-13. 13p.
Autor:
Twining, Benjamin S.1 btwining@bigelow.org
Publikováno v:
Oceanography. Jun2024, Vol. 37 Issue 2, p120-130. 11p.
Conference
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Autor:
M. Miura-Mattausch, P. Weger, R. Kopl, H. Kabza, M. Reisch, H.W. Meul, J. Weng, R. Schreiter, H. Klose, D. Hartwig, K. Ehinger, M. Ohnemus, Thomas Meister, L. Treitinger, H. Schaber, I. Kerner
Publikováno v:
IEEE Electron Device Letters. 10:344-346
A double-poly-Si self-aligning bipolar process employing 1- mu m lithography is developed for very-high-speed circuit applications. Epilayer doping and thickness are optimized for breakdown voltages and good speed-power performance. Shallow base-emit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ec5817ffe5be5b2cd3b156888b00149
https://doi.org/10.1109/55.31751
https://doi.org/10.1109/55.31751
Autor:
Mitiko Miura-Mattausch, M. Ohnemus
The lateral arsenic doping profile of the emitter outdiffused from the polysilicon layer has been estimated. It has been done by a combination of measured E/B depletion junction capacitance C EB and that calculated by 2D simulation. Since the periphe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48700a4bc5ae93f1401a5d7e8ad9d12f
https://doi.org/10.1007/978-3-642-52314-4_197
https://doi.org/10.1007/978-3-642-52314-4_197
