Zobrazeno 1 - 10
of 71
pro vyhledávání: '"M. Offenberg"'
Autor:
Robert M. Offenberg, Althier M. Lazar
Publikováno v:
Journal of Literacy Research. 43:275-313
Teachers often resist discussions about racism in the classroom, yet it is a topic that is frequently addressed in multicultural literature. This study examines teachers in a graduate reading program ( N = 58) who used picture books reflecting Africa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b00779343fb72d98ddd8ebe422786f6
https://doi.org/10.1177/1086296x11413720
https://doi.org/10.1177/1086296x11413720
Autor:
Robert M. Offenberg
Publikováno v:
Journal of Education for Students Placed at Risk (JESPAR). 9:337-355
Many attempts at educational reform, among them No Child Left Behind and a recent Philadelphia effort, assume that the quality of the educational programs being offered by schools can be inferred from the achievements of the children who attend them.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::853c14984d6704f7623376dd5353838b
https://doi.org/10.1207/s15327671espr0904_2
https://doi.org/10.1207/s15327671espr0904_2
Autor:
Robert M. Offenberg
Publikováno v:
Middle School Journal. 32:23-29
This study is a group of natural experiments designed to compare and contrast the achievement of students in public K-to-8 schools with the achievement of students in sepa rate public middle grades schools in Philadelphia. The middle grades schools i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91947ed95dcb164db587bdf1a03dbab4
https://doi.org/10.1080/00940771.2001.11495283
https://doi.org/10.1080/00940771.2001.11495283
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 7:96-100
Integrated processing of MOS gate dielectric structures has been carried out in an ultraclean, multichamber processing system as a prototype for cluster (multichamber) processing in order to understand the potential and limitations of cluster process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c70d4425fc3db592e332e1f6a5080ee2
https://doi.org/10.1109/66.286838
https://doi.org/10.1109/66.286838
Autor:
Claire, Tilbury, Paulien M, van Kampen, Tom A M M, Offenberg, Tom, Hogervorst, Pol E, Huijsmans
Publikováno v:
Nederlands tijdschrift voor geneeskunde. 155(38)
Effective intra-operative anaesthesia and peri-operative analgesia are important aspects of patient care in orthopaedic surgery. The interscalene regional anaesthetic block technique, performed with the patient lying in a lateral decubitus position,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::9b2904f8cfe6488af9d6868f61131fe5
https://pubmed.ncbi.nlm.nih.gov/21939569
https://pubmed.ncbi.nlm.nih.gov/21939569
Publikováno v:
ChemInform. 23
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c29b32e6c7e1e9e2df8dcd6d67fb88d
https://doi.org/10.1002/chin.199221312
https://doi.org/10.1002/chin.199221312
Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films: II
Publikováno v:
Journal of The Electrochemical Society. 139:880-889
In this paper the authors review paramagnetic point defects in amorphous silicon nitride thin films. We will discuss two intrinsic paramagnetic defects: a trivalent silicon center, named the K-center, and the recently observed nitrogen dangling-bond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9412ff080da4728acfe547b0aba3fcdf
https://doi.org/10.1149/1.2069319
https://doi.org/10.1149/1.2069319
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:1058-1065
A multichamber ultrahigh vacuum processing and analysis system has been used to study integrated thermal oxide processing, in which the final precleaning process and the thermal oxidation process are integrated by employing transfer of the wafers thr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99b315cac2ed9f5632d2f93a1cd75f80
https://doi.org/10.1116/1.577577
https://doi.org/10.1116/1.577577
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:2960-2964
Epitaxial silicon has been grown on Si(100) wafers using SiH4 in a rapid thermal chemical vapor deposition reactor in the temperature regime from 450–700 °C. Gas analysis during growth and thermal desorption spectra (TDS) after growth were measure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f755bb8589ceedc831f8d8a652b35926
https://doi.org/10.1116/1.576613
https://doi.org/10.1116/1.576613
Sensor Portfolio for Automotive Applications Based on Surface Micro-Machining with Thick Polysilicon
Publikováno v:
Advanced Microsystems for Automotive Applications 2000 ISBN: 9783642621079
In this paper we present a family of micro-machined accelerometers based on a common manufacturing process . This process features a 10μm thick polysilicon layer used for the movable sensor structure. The sensing elements are sealed on wafer level w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8960659f2bfe3686511d9fdb4937f271
https://doi.org/10.1007/978-3-642-18146-7_18
https://doi.org/10.1007/978-3-642-18146-7_18
