Zobrazeno 1 - 10
of 12
pro vyhledávání: '"M. O. Tanner"'
Publikováno v:
Journal of Applied Physics. 81:1695-1699
A thick (260 nm) pseudomorphic metastable n-type Ge0.06Si0.94 layer grown by molecular beam epitaxy on an n-type Si(100) substrate was implanted at room temperature with 70 keV BF2+ ions to a dose of 3×1013 cm−2, so that a p−n junction was forme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef423c2e6941f20124771281d37a42ef
https://doi.org/10.1063/1.364026
https://doi.org/10.1063/1.364026
Publikováno v:
Journal of Materials Science: Materials in Electronics. 6:311-324
In this paper, we review recent progress in SiGe MOS technology. Progress in high mobility p-channel and n-channel devices will be presented as well as some of the materials and processing issues related to the fabrication of these heterostructures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6839951893068d918c7a254796703ee
https://doi.org/10.1007/bf00125886
https://doi.org/10.1007/bf00125886
Publikováno v:
Journal of The Electrochemical Society. 142:1260-1266
The properties of a highly selective chemical etchant composed of hydrofluoric acid, hydrogen peroxide, and acetic acid (HF:H 2 O 2 :CH 3 COOH) is investigated in etching SiGe/Si heterostructures. This solution has been found to etch Si 1-x Ge x much
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57ada9eea8d356baeb53a7529ccd7b67
https://doi.org/10.1149/1.2044161
https://doi.org/10.1149/1.2044161
Autor:
Edward T. Croke, R. M. Sieg, Samuel A. Alterovitz, Paul G. Young, R. A. Mena, Kang L. Wang, M. O. Tanner, M. J. Harrell
Publikováno v:
Journal of Applied Physics. 74:586-595
Spectroscopic ellipsometry (SE) characterization of several complex Si (sub X)Ge (sub 1-x)/Si heterostructures prepared for device fabrication, including structures for heterojunction bipolar transistors (HBT), p-type and n-type heterostructure modul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46b07eaa0931d7205332976c50592a48
https://doi.org/10.1063/1.355271
https://doi.org/10.1063/1.355271
Publikováno v:
Applied Physics Letters. 76:2680-2682
We report on the growth and characterization of high-quality strain-relaxed SiGe alloys on a compliant silicon–on–insulator (SOI) substrate. The annealing temperature required for strain transfer has been reduced through boron implantation to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::510e1e1f06b8a3290e975e73a563c149
https://doi.org/10.1063/1.126442
https://doi.org/10.1063/1.126442
Publikováno v:
Applied Physics Letters. 72:2307-2309
A 48 μm cutoff wavelength (λc) Si far-infrared (FIR) detector is demonstrated. Internal photoemission over a Si interfacial work-function of a homojunction consisting of molecular beam epitaxy grown multilayers (p+ emitter layers and intrinsic laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fc0f7b2207f27d466ae5b59972ed53a
https://doi.org/10.1063/1.121344
https://doi.org/10.1063/1.121344
Publikováno v:
Applied Physics Letters. 71:2190-2192
A forward S-type bistability was observed in a Si diode with two double δ-doped Si tunnel junctions between the p and n contacts. The conductivity in the two branches of the bistable I–V curve changes by seven orders of magnitude. This, coupled wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55b256719e597d8b99c9344269428bef
https://doi.org/10.1063/1.119377
https://doi.org/10.1063/1.119377
Publikováno v:
Applied Physics Letters. 71:515-517
We report on the investigation of free-carrier absorption characteristics for epitaxially grown p-type silicon thin films in the far-infrared region (50–200 μm), where Si homojunction interfacial workfunction internal photoemission (HIWIP) detecto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcc95feb92677a666855be1be0b557e5
https://doi.org/10.1063/1.119595
https://doi.org/10.1063/1.119595
Publikováno v:
Applied Physics Letters. 67:566-568
Ge0.5Si0.5 strained‐layer pin photodiodes, in which multiple strained layers serve as the absorption region, have been fabricated. These devices exhibit an optical response at wavelengths beyond 1.3 μm at normal incidence. The measured external qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e4026bafd6fcb7a87cc1211bff58994
https://doi.org/10.1063/1.115171
https://doi.org/10.1063/1.115171
Publikováno v:
MRS Proceedings. 484
We report the investigation of free-carrier absorption characteristics for epitaxially grown p-type thin films in the far-infrared region (50 ∼ 200 μm), where homojunction interfacial workfunction internal photoemission (HIWIP) detectors are emplo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62be152d18b57edc5f031bfecc08f319
https://doi.org/10.1557/proc-484-199
https://doi.org/10.1557/proc-484-199