Zobrazeno 1 - 10
of 12
pro vyhledávání: '"M. O. Kushlyk"'
Autor:
M. O. Kushlyk, A. Pieniążek, Andrzej Suchocki, Yaroslav Zhydachevskyy, V. Tsiumra, Volodymyr Haiduchok, D. Sugak, Ihor I. Syvorotka, M. Aleszkiewicz
Publikováno v:
Applied Nanoscience. 12:317-334
In this paper technological aspects of preparation of silver nanostructures on garnet substrates and their impact on absorption and photoluminescence have been studied. For this purpose, the changes of plasmonic properties as a function of the Ag NPs
Publikováno v:
Applied Nanoscience. 10:4767-4772
Monocrystals of p-Si were used to study the changes in the electrical conductivity of silicon in the course of the action of a single-acting elastic load and X-radiation. An equation describing the dependence of the surface conductivity of irradiated
Autor:
V. Tsiumra, M. O. Kushlyk, Volodymyr Haiduchok, Ya. Zhydachevskyy, Ihor I. Syvorotka, D. Sugak, Andrzej Suchocki
Publikováno v:
Journal of Alloys and Compounds. 804:202-212
Silver (Ag) plasmonic structures on the surface of Сe and Yb co-doped yttrium aluminium garnet fluorescent epitaxial films were prepared by the magnetron sputtering technique. The nucleation and growth of Ag nanoparticles (NPs) were controlled by a
Autor:
R. I. Didyk, B. Pavlyk, D. P. Slobodzyan, R. M. Lys, Josyp Shykorjak, Ivan Karbovnyk, M. O. Kushlyk
Publikováno v:
Applied Nanoscience. 9:1775-1779
In thе work, changes in the surface electrical resistance of p-Si crystals were investigated under the simultaneous action of the magnetic field and elastic uniaxial deformation. It was established that a sharp decrease (leap) of resistance occurs a
Publikováno v:
Journal of Physical Studies. 24
Publikováno v:
Applied Nanoscience. 9:865-871
Changes in the defect structure and luminescence properties of silicon p-type crystals surface layer under the influence of plastic deformation and high temperature annealing in oxygen atmosphere were investigated. A special role of dislocations in t
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-8 (2017)
Nanoscale Research Letters
Nanoscale Research Letters
Changes of the defect structure of silicon p-type crystal surface layer under the influence of plastic deformation and high temperature annealing in oxygen atmosphere were investigated by deep-level capacitance-modulation spectroscopy (DLCMS) and IR
Publikováno v:
Lecture Notes in Mechanical Engineering ISBN: 9789811361326
The effect of a thin film of aluminum on morphology and change in the characteristics of p-type silicon crystals was investigated in the work. It is established that a sprayed metallic film receives the nanosized complexes from the inner part of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ce739ad1a7c3b92a5e4fb14d0207ab7
https://doi.org/10.1007/978-981-13-6133-3_19
https://doi.org/10.1007/978-981-13-6133-3_19
Publikováno v:
Ukrainian Journal of Physics; Vol. 58 No. 8 (2013); 742
Український фізичний журнал; Том 58 № 8 (2013); 742
Український фізичний журнал; Том 58 № 8 (2013); 742
The deposition of Al film onto the (111) surface of a p-Si crystal was shown to induce a deformation in the near-surface layer of the latter. Provided that the crystal strain is elastic and uniaxial, the gettering of defects in the near-surface layer
Autor:
Andriy Luchechko, M. O. Kushlyk, S. Ubizskii, V. Vasyltsiv, Ya. Zhydachevskyy, Andrzej Suchocki
Publikováno v:
Journal of Physics D: Applied Physics. 53:354001
Detailed investigations of the spectroscopic properties of Cr3+ ions in β-Ga2O3: 0.05% Cr3+ single crystals grown by the floating zone technique have been performed in the temperature range 4.5–550 K. The luminescence of Cr3+ ions at low temperatu