Zobrazeno 1 - 5
of 5
pro vyhledávání: '"M. O. Kovalets"'
Publikováno v:
Фізика і хімія твердого тіла, Vol 18, Iss 1, Pp 29-33 (2018)
Results of Hall effect measurements of cadmium telluride crystals, doped by silicon (dopant concentration in the melt was 1018 - 1019 cm-3), allowed to classify the studied samples and the conditions under which probably the definite crystal and impu
Externí odkaz:
https://doaj.org/article/ec49249f295d49c7b07ba34df2982cdc
Autor:
V.Z. Shlyakhovuy, E. S. Nikonyuk, M. I. Kuchma, V.M. Frasuniak, Z. I. Zakharuk, M. O. Kovalets
Publikováno v:
Journal of Crystal Growth. 161:186-189
By means of electrical and magnetic investigation of Yb-doped CdTe crystals, the following was established: (1) Additional shallow donors and paramagnetic centers are not introduced into the doping process; the hole conductivity of doped crystals is
Autor:
I. M. Yuriychuk, M. O. Kovalets, M. I. Kuchma, V. L. Shlyakhovyi, A. I. Savchuk, E. S. Nikonyuk, Z. I. Zakharuk
The temperature dependences (T = 80 - 420 K) of the concentration of charge carriers and the Hall mobility in undoped CdTe and CdTe:Gd single crystals grown by the Bridgman method are studied. It is found that the conductivity type of CdTe:Gd crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be2d22609e6153bfa5bfb934845738ec
http://dspace.nbuv.gov.ua/handle/123456789/118666
http://dspace.nbuv.gov.ua/handle/123456789/118666
We present the results of optical and electrophysical investigations of CdTe:Cr crystals. A model explaining a considerable shift of the fundamental absorbtion edge in the crystals into the long-wave region is proposed. It is found that the doping of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7bddfd3b831b2c863dee4ee2ec12c821
http://dspace.nbuv.gov.ua/handle/123456789/118128
http://dspace.nbuv.gov.ua/handle/123456789/118128
Autor:
Wang, Tao, Ai, Xin, Yin, Ziang, Zhao, Qinghua, Zhou, Boru, Yang, Fan, Xu, Lingyan, Zha, Gangqiang, Jie, Wanqi
Publikováno v:
CrystEngComm; 4/28/2019, Vol. 21 Issue 16, p2620-2625, 6p