Zobrazeno 1 - 10
of 203
pro vyhledávání: '"M. Nunoshita"'
Publikováno v:
IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part B. 17:584-589
Lead inductances of a 432-lead TCP (Tape Carrier Package) with a metal cap are evaluated by treating the leads as multiconductor-coupled lines. A useful inductance evaluating method is obtained by using a quasi-TEM electromagnetic field analysis and
Publikováno v:
IEEE Transactions on Components, Hybrids, and Manufacturing Technology. 16:592-597
To adjust the resistance of thick-film resistors (TFRs) buried in polyimide film, a process using a laser is proposed. Short-duration pulses from an Nd:YAG laser are used to irradiate the TFRs through the polyimide film. The TFR surface is modified t
Publikováno v:
IEEE Transactions on Components, Hybrids, and Manufacturing Technology. 13:873-878
The mechanism of electromigration between the inner leads of large-scale integrated (LSI) chips in ceramic packages that are coated by thick polyimides to prevent alpha-particle-induced soft errors is discussed. Short-circuit failures between neighbo
Publikováno v:
Journal of Applied Physics. 75:8231-8233
The sheet resistances of ZnSe epitaxial layers etched by reactive ion etching (RIE) with use of a gas mixture of ethane and hydrogen were measured. The results showed that a high resistivity region was introduced by RIE. Characterization was done by
Publikováno v:
1991 Proceedings 41st Electronic Components & Technology Conference.
A novel manufacturing technology of buried RuO/sub 2/-based thick-film resistor (TFR) in copper-polyimide system has been studied. Since electrodes of copper thin film are formed on the TFR by using photolithography and a plating method and the resis
Publikováno v:
40th Conference Proceedings on Electronic Components and Technology.
The mechanism of electromigration between the inner leads in a ceramic package was investigated. The short-circuit failure between the neighboring pins of the ceramic package, in which a polyimide-coated LSI chip was assembled, was observed in tests
Publikováno v:
Seventh International Conference on Indium Phosphide and Related Materials.
Crystal facets of InP for the reflection mirrors of short cavity laser diodes were successfully fabricated by a novel wafer process without use of cleavage. Selective InP epitaxial growth on sidewalls formed by dry etching was realized as vertical an
Autor:
K. Mitsunaga, Hirokazu Miyoshi, M. Nunoshita, N. Tsuji, M. Hatanaka, Hiroshi Onoda, Kiyohiko Sakakibara, T. Ohnakado, Natsuo Ajika
Publikováno v:
Proceedings of International Electron Devices Meeting.
A novel electron injection scheme for flash memory is proposed, where band-to-band tunneling induced hot electrons (BBHE) are employed in a P-channel cell. This proposed method ensures the realization of high program efficiency, high scalability and
Autor:
H. Sumitani, S. Uzawa, K. Itoga, Y. Nishioka, T. Kuroiwa, Yasunori Tokuda, Sunao Aya, S. Yamamoto, Takaaki Kawahara, Takeshi Fujino, Takashi Hifumi, H. Abe, Kenji Marumoto, Katsuomi Shiozawa, Toshiyuki Oishi, K. Kanamoto, T. Oomori, K. Nishikawa, M. Nunoshita, Hideki Yabe, Masafumi Kimata
Publikováno v:
Proceedings of International Electron Devices Meeting.
We have fabricated experimental memory cell arrays with a unit cell size of 0.29 /spl mu/m/sup 2/ (0.38 /spl mu/m/spl times/0.76 /spl mu/m). The layout was designed for a half-pitch 8F/sup 2/ cell with 0.14-/spl mu/m process technology, which is prom
A CMOS optical/potential image sensor with 7.5μm pixel size for on-chip neural and DNA spot sensing.
Publikováno v:
2005 IEEE Engineering in Medicine & Biology 27th Annual Conference; 2005, p7269-7272, 4p