Zobrazeno 1 - 10
of 23
pro vyhledávání: '"M. Norishima"'
Autor:
Hiroomi Nakajima, B. Baccus, K. Inou, Naoyuki Shigyo, Toshihiko Iinuma, T. Wada, M. Norishima, Hiroshi Iwai
Publikováno v:
IEEE Transactions on Electron Devices. 39:648-661
A nonequilibrium diffusion model has been developed to study the influence of point defects on dopant redistribution, especially for transient enhanced diffusion. The coupled equations for point defects, substitutional impurities, and impurities/poin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b25a8fbef7d053fcd8080b3156adf2a
https://doi.org/10.1109/16.123491
https://doi.org/10.1109/16.123491
Publikováno v:
IEEE Transactions on Electron Devices. 39:33-40
A low-temperature-processed (800-850 degrees C) bipolar transistor design suitable for the high-performance 0.5- mu m BiCMOS process is discussed. It has been found that insufficient activation of arsenic in the emitter, enhanced boron diffusion in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d65a6868ff77bfe24a792756307b1e85
https://doi.org/10.1109/16.108209
https://doi.org/10.1109/16.108209
Autor:
S. Takatsuka, Yasuro Shobatake, S. Kitaoka, Kenji Sakaue, Masahiko Motoyama, Hiroyuki Hara, M. Noda, Hiroshi Momose, M. Norishima, K. Maeguchi, Shoichi Shimizu, M. Ishibe, K. Matsuda, Y. Niitsu, S. Tanaka, Y. Kumaki, T. Kodama
Publikováno v:
IEEE Journal of Solid-State Circuits. 26:1133-1144
An experimental element switch LSI for asynchronous transfer mode (ATM) switching systems was realized using 0.8- mu m BiCMOS technology. The element switch transfers cells asynchronously when used in a buffered banyan network. Three key features of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e5eae8e7887f0c35383853b8bd84483
https://doi.org/10.1109/4.90074
https://doi.org/10.1109/4.90074
Publikováno v:
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::348496db4c3d9329b1a24f1f84b82bf7
https://doi.org/10.1109/nupad.1990.748278
https://doi.org/10.1109/nupad.1990.748278
Publikováno v:
Proceedings of the Bipolar Circuits and Technology Meeting.
The effect of the interfacial native oxide layer between polycrystalline and single-crystal Si was investigated in the submicron-rule bipolar and BiCMOS processes. It was found that the native oxide increases the current gain, but significantly degra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4475d2a61a81f4e29365345f19c3c081
https://doi.org/10.1109/bipol.1989.69467
https://doi.org/10.1109/bipol.1989.69467
Publikováno v:
International Technical Digest on Electron Devices Meeting.
A low-temperature (800-850 degrees C) processes bipolar transistor design suitable for high-performance 0.5- mu m BiCMOS process is discussed. It was found that insufficient activation of arsenic in the emitter, fast base boron diffusion in the low-c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d686cfd0ddc6575a731dfa9425ecf19b
https://doi.org/10.1109/iedm.1989.74269
https://doi.org/10.1109/iedm.1989.74269
Autor:
T. Kuroda, T. Fujita, S. Mita, T. Nagamatu, S. Yoshioka, F. Sano, M. Norishima, M. Murota, M. Kako, M. Kinugawa, M. Kakumu, T. Sakurai
Publikováno v:
1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b14df6348bca1a0342c45274a4fc272f
https://doi.org/10.1109/isscc.1996.488555
https://doi.org/10.1109/isscc.1996.488555
Publikováno v:
Proceedings of the IEEE 1991 Custom Integrated Circuits Conference.
A 0.5- mu m BiCMOS technology for achieving speed performance with scaling is described. For the lower supply voltage of 3.3 V, the delay time of the conventional BiCMOS gate becomes almost equal to that of the CMOS gate. A BiNMOS circuit was employe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e408388c9ee118a15ec98a03b2e5bd7
https://doi.org/10.1109/cicc.1991.164101
https://doi.org/10.1109/cicc.1991.164101
Publikováno v:
Proceedings of the 1991 Bipolar Circuits and Technology Meeting.
The influence of ion-implantation damage on the formation of emitter and base in advanced bipolar technologies is studied. A novel nonequilibrium diffusion model has been developed to analyze this issue. By comparing simulation and experiments on a 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e5d34d4f6c5cf4dee165cfaa7a3f9af
https://doi.org/10.1109/bipol.1991.161002
https://doi.org/10.1109/bipol.1991.161002
Autor:
M. Seto, M. Murota, K. Miyamoto, R. Ogawa, Minakshisundaran Balasubramanian Anand, Masahiro Inohara, M. Norishima, H. Ohtani, Masakazu Kakumu, K. Inoue, C. Fukuhara, Hideki Shibata, Tadashi Matsuno
Publikováno v:
1995 Symposium on VLSI Technology. Digest of Technical Papers.
Back-end-of-the line (BEOL) interconnect process integration for sub-half-micron ASIC applications with both low-cost merit and appropriately high performance is presented. Borderless and stacked contact/via structures to reduce chip size and minimiz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f6d23a65b7dabf989b8241229e4e4e0
https://doi.org/10.1109/vlsit.1995.520853
https://doi.org/10.1109/vlsit.1995.520853