Zobrazeno 1 - 10
of 55
pro vyhledávání: '"M. Nesnidal"'
Autor:
Dan Botez, J Mawst, E. Stiers, M. Nesnidal, Dmitry V. Vysotsky, V.N. Troshchieva, A.G. Sukharev, N. N. Elkin, Anatoly P. Napartovich
Publikováno v:
IEEE Journal of Quantum Electronics. 42:589-599
A three-dimensional (3-D) above-threshold analysis has been performed for laterally antiguided laser structures of the antiresonant-reflecting-optical-waveguide type, of relatively large core width (/spl sim/ 10 /spl mu/m), for high-power, single-spa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11ac5d6e6aa5fa509b978552354d78f0
https://doi.org/10.1109/jqe.2006.874065
https://doi.org/10.1109/jqe.2006.874065
Autor:
F.D. Alvarez, A. Al-Muhanna, R. Johnson, Luke J. Mawst, Dan Botez, H. Yang, Timothy A. Vang, M. Nesnidal
Publikováno v:
Journal of Crystal Growth. 195:609-616
The selective etching and oxide-free regrowth properties of the Al-free InGaAs(P)/InGaP/GaAs material system have been exploited at λ =968 nm to demonstrate a novel single-spatial-mode diode laser: the simplified antiresonant reflecting optical wave
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9172b77f3e5a9bcd264f06e4ad99a56f
https://doi.org/10.1016/s0022-0248(98)00564-8
https://doi.org/10.1016/s0022-0248(98)00564-8
Autor:
R.F. Nabiev, M. Jansen, Arnab Bhattacharya, A. Syrbu, J. Lopez, Alexandru Z. Mereutza, Luke J. Mawst, Grigore Suruceanu, V.P. Yakovlev, Dan Botez, M. Nesnidal
Publikováno v:
Journal of Crystal Growth. 170:383-389
Al-free InGaAs/InGaAsP/InGaP laser structures grown by MOVPE have yielded new records in performance. CW front-facet-emitted powers of 5.8 W are achieved from optimized double-quantum-well lasers with 100 μm wide stripes and 1 mm long cavity lengths
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc0c359ad394ab4a4d7dc14313ccafab
https://doi.org/10.1016/s0022-0248(96)00513-1
https://doi.org/10.1016/s0022-0248(96)00513-1
Publikováno v:
2011 37th IEEE Photovoltaic Specialists Conference.
In order to increase thermal stability of solar cells for high temperature applications, wide bandgap semiconductors such as GaP are being investigated. The addition of nanostructures, such as quantum wells to the solar cell is expected to extend sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a42699623a75f2a52ff827e170a694e
https://doi.org/10.1109/pvsc.2011.6186337
https://doi.org/10.1109/pvsc.2011.6186337
Autor:
Dan Botez, R. Johnson, A. Al-Muhanna, Timothy A. Vang, H. Yang, M. Nesnidal, Luke J. Mawst, F.D. Alvarez
Publikováno v:
IEEE Photonics Technology Letters. 10:1079-1081
Simplified antiresonant-reflective-optical-waveguide distributed-feedback semiconductor lasers based on Al-free InGaAs-InGaAsP-InGaP materials are reported for the first time. Devices with 6.5-/spl mu/m-wide emitting apertures operate single-frequenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88d4589bd36e74649d14dec1413a11d0
https://doi.org/10.1109/68.701508
https://doi.org/10.1109/68.701508
Publikováno v:
IEEE Photonics Technology Letters. 10:507-509
In resonant and nearly resonant antiguided arrays (ROW arrays), if the grating is located below the active region, a distributed-feedback (DFB) grating can function as a selector for the in-phase array mode in addition to its role as a frequency disc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e436ef55ce1d1bf54acde4361d1548dc
https://doi.org/10.1109/68.662576
https://doi.org/10.1109/68.662576
Publikováno v:
IEEE Photonics Technology Letters. 9:34-36
We show here, for the first time, that a distributed-feedback (DFB) grating can act as a lateral-mode discriminator if located below the active region of a phase-locked antiguided array. Spatial-mode selection from such a lower-DFB (LDFB) grating in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b035e88e892245c481cb55738152789
https://doi.org/10.1109/68.554162
https://doi.org/10.1109/68.554162
Autor:
M. Nesnidal, Nickolai N. Elkin, Dmitry V. Vysotsky, Dan Botez, E. Stiers, Anatoly P. Napartovich, A.G. Sukharev, Luke J. Mawst, V.N. Troshchieva
Publikováno v:
NUSOD '05. Proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices, 2005..
We have developed a 3D numerical code supplied with a user-friendly interface for modeling active diode-laser structures, taking into account light diffraction and carrier diffusion. Laser characteristics are found as functions of the above-threshold
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dcc1619a23af5aff6db38fa0929b60d
https://doi.org/10.1109/nusod.2005.1518123
https://doi.org/10.1109/nusod.2005.1518123
Autor:
Anatoly P. Napartovich, Luke J. Mawst, A.G. Sukharev, Dan Botez, M. Nesnidal, Nickolai N. Elkin, Dmitry V. Vysotsky, E. Stiers, V.N. Troshchieva
Publikováno v:
SPIE Proceedings.
There is an increasing need for single-spatial-mode, edge-emitting semiconductor lasers with reliable cw output power of around 1 W for applications such as pumps for rare-earth-doped fiber amplifiers and free-space communications. The design of resp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18ffdfb4f948a78f6928ca0588cb90cf
https://doi.org/10.1117/12.589551
https://doi.org/10.1117/12.589551
Autor:
E. Stiers, Luke J. Mawst, N. N. Elkin, M. Nesnidal, Dmitry V. Vysotsky, A.G. Sukharev, Anatoly P. Napartovich, Dan Botez
Publikováno v:
Lecture Notes in Computer Science ISBN: 9783540249375
NAA
NAA
This paper presents a menu-driven computer program developed for numerical simulations of single-mode diode lasers operating well above threshold. The program described here offers additional improvements and increased functionality, allowing us to m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c66805edfa9a285dee4be75abb3a0c52
https://doi.org/10.1007/978-3-540-31852-1_32
https://doi.org/10.1007/978-3-540-31852-1_32
