Zobrazeno 1 - 10
of 45
pro vyhledávání: '"M. Najmzadeh"'
Publikováno v:
Journal of Gerontology. 2:34-42
Autor:
Edward Yi Chang, Rehan Kapadia, Chien-I Kuo, Angada B. Sachid, Chunwing Yeung, Chenming Hu, M. Najmzadeh, Ching-Yi Hsu, Ali Javey, Yuping Zeng
Publikováno v:
IEEE Transactions on Nanotechnology. 14:580-584
A type-III (broken gap) band alignment heterojunction vertical in-line InAs/AlSb/GaSb tunnel FET, including a 2-nm-thin AlSb tunneling barrier is demonstrated. The impact of overlap and underlap gate is studied experimentally and supported further by
Publikováno v:
Solid-State Electronics. 98:55-62
In this paper, we report the first systematic study on electron mobility extraction in equilateral triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm. 1 x 10(19) cm(-3) n-type channel doping, 5-20 nm Si nanow
Publikováno v:
Solid-State Electronics. 74:114-120
In this work we report dense arrays of accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-sections in a highly doped regime. The integration of local stressor technologies (both local oxidation and metal-gate strain) to achiev
Publikováno v:
Solid-State Electronics. 54:935-941
This paper reports all-silicon asymmetrically strained Tunnel FET architectures that feature improved subthreshold swing and Ion/Ioff characteristics. We demonstrate that a lateral strain profile corresponding to at least 0.2 eV band-gap shrinkage at
Autor:
Sarah H. Olsen, Adrian M. Ionescu, Kirsten E. Moselund, P. Dobrosz, L. De Michielis, Didier Bouvet, V. Pott, M. Najmzadeh
Publikováno v:
IEEE Transactions on Electron Devices. 57:866-876
This work demonstrates a method for incorporating strain in silicon nanowire gate-all-around (GAA) n-MOSFETs by oxidation-induced bending of the nanowire channel and reports on the resulting improvement in device performance. The variation in strain
Autor:
Sujay B. Desai, Deyi Fu, Jeong Seuk Kang, Junqiao Wu, Ali Javey, Sefaattin Tongay, Der Hsien Lien, Mahmut Tosun, M. Najmzadeh, Changhyun Ko
Publikováno v:
Scientific reports, vol 5, iss 1
Scientific Reports
Scientific Reports
In this work, we report lateral heterojunction formation in as-exfoliated MoS2 flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction and consequently the conducti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::106a1b8fcf9c6fc3eb36a6cd830b1e3f
https://escholarship.org/uc/item/69f1z6vm
https://escholarship.org/uc/item/69f1z6vm
Publikováno v:
2015 73rd Annual Device Research Conference (DRC).
In this paper, 2D MOSFET operation of a fully-depleted double-gate bulk MoS 2 is studied at a quasi-flatband of the back-gate for the first time. Several key device parameters such as equivalent oxide thickness (EOT), carrier concentration, flatband
Publikováno v:
Applied Physics Express. 9:055201
In this paper, a multilayer ReS2 p–n homojunction is fabricated on an oxidized Si substrate, and its photoemission under a forward bias and its photodetection under a reverse bias are reported for the first time. Au nanoparticles were used to make
Publikováno v:
2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).
In this work we report dense arrays of highly doped gate-all-around Si nanowire accumulation-mode nMOS-FETs with sub-5 nm cross-sections. The integration of local stressor technologies (both local oxidation and metal-gate strain) to achieve ≥ 2.5 G