Zobrazeno 1 - 2
of 2
pro vyhledávání: '"M. Nafrı´a"'
Autor:
L. Aguilera, J. Martı´n-Martı´nez, M. Porti, R. Rodrı´guez, M. Cambrea, F. Crupi, M. Nafrı´a, X. Aymerich
Publikováno v:
Microelectronic Engineering. 84:2113-2116
In this work, the electrical properties of stressed NMOSFETs with different gate electrodes (Polysilicon and TiN) and HfSiON gate dielectric have been compared. The results show that TiN gated devices are less sensitive to electrical stress. The SPIC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74031d2d0558c28680a84a9a2af9dd9b
https://doi.org/10.1016/j.mee.2007.04.093
https://doi.org/10.1016/j.mee.2007.04.093
Autor:
M. Porti, S. Gerardin, M. Nafrı´a, X. Aymerich, A. Cester, A. Paccagnella, P. Schiavuta, R. Pierobon
Publikováno v:
Università degli Studi di Padova-IRIS
In this work, different Atomic Force Microscopy (AFM) related techniques have been used to completely characterize soft- and hard-breakdown spots of SiO"2 gate oxides. In particular, C-AFM (Conductive AFM), SCM (Scanning Capacitance Microscopy) and K
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::54a86ea73710a87c8139256183a21d8c
http://hdl.handle.net/11577/2436376
http://hdl.handle.net/11577/2436376
