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Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region

Autor: Mikhail V. Maximov, F. I. Zubov, Alexander Mintairov, Charis Mesaritakis, A. M. Nadtochy, A. V. Savel’ev, N. V. Kryzhanovskaya, E. M. Arakcheeva, Dimitrios Syvridis, Eduard Moiseev, A. E. Zhukov, D.A. Livshits, Andrey A. Lipovskii, Alexandros Kapsalis, M. M. Kulagina

Publikováno v: Semiconductors. 47:1387-1390

Microring cavities (diameter D = 2.7–7 μm) with an active region based on InAs/InGaAs quantum dots are fabricated and their characteristics are studied by the microphotoluminescence method and near-field optical microscopy. A value of 22 000 is ob

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b702a4ff3a0d2d22a236c278bf645c00
https://doi.org/10.1134/s1063782613100187

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Passive cavity surface-emitting lasers: option of temperature-insensitive lasing wavelength for uncooled dense wavelength division multiplexing systems

Autor: A. A. Blokhin, S. A. Blokhin, Kent D. Choquette, A. M. Nadtochy, W. Meredith, Nikolay A. Maleev, N. N. Ledentsov, A. S. Payusov, N. Y. Gordeev, Thomas J. Slight, Yu. M. Zadiranov, V. M. Ustinov, V. A. Shchukin, Mikhail V. Maximov

Publikováno v: SPIE Proceedings.

A concept of passive cavity surface–emitting laser is proposed aimed to control the temperature shift of the lasing wavelength. The device contains an all–semiconductor bottom distributed Bragg reflector (DBR), in which the active medium is place

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e96b2241fd7e8ce5a80ab73f9a302c1e
https://doi.org/10.1117/12.2208915

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High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots

Autor: I. A. Slovinsky, N. V. Kryzhanovskaya, Mikhail V. Maximov, A. E. Zhukov, E. M. Arakcheeva, A. V. Savel'ev, A. M. Nadtochy, S. I. Troshkov, Andrey A. Lipovskii, Yu. M. Zadiranov, M. M. Kulagina

Publikováno v: Semiconductors. 46:1040-1043

Lasing at a wavelength of >1.3 μm has been achieved at temperatures of up to 380 K in a ring microlaser (diameter of 6 μm) with an active region based on InAs/InGaAs quantum dots.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dbb46cb28205bed8383d4fc4396b1821
https://doi.org/10.1134/s106378261208012x

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Effect of AlGaAs-(AlGa) x O y pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots

Autor: Mikhail V. Maximov, Nikolai N. Ledentsov, K. V. Fedorova, V. M. Ustinov, A. M. Nadtochy, N. V. Kryzhanovskaya, S. A. Blokhin, Dieter Bimberg, A. E. Zhukov, N. D. Il’inskaya

Publikováno v: Semiconductors. 45:962-965

Effect of parameters of the AlGaAs-(AlGa)xOy layer forming the pedestal of a microdisk laser with an active region based on InAs/InGaAs quantum dots on specific features of the emission spectrum at a temperature of 15 K under optical excitation has b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5f66397ba32c08dd140d04b512ded5ab
https://doi.org/10.1134/s1063782611070116

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Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots

Autor: A. M. Nadtochy, Alexey E. Zhukov, S. A. Blokhin, Nikolai N. Ledentsov, A. S. Payusov, S. S. Mikhrin, E. S. Shatalina, A. R. Kovsh, Mikhail V. Maximov, V. M. Ustinov, A. V. Savelyev

Publikováno v: Semiconductors. 44:1308-1312

With the help of the photocurrent spectroscopy, the mechanism of emission of charge carriers from energy levels of the (In,Ga)As/(Al,Ga)As quantum dots of different design are studied. Thermal activation is shown to be the main mechanism of carrier e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::654cac2c96cdb624164accb3c5f67c37
https://doi.org/10.1134/s106378261010012x

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Methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures on GaAs substrates

Autor: N. V. Kryzhanovskaya, V. V. Mamutin, V. S. Mikhrin, A. Yu. Egorov, A. M. Nadtochy, E. V. Pirogov

Publikováno v: Semiconductors. 42:805-812

Studies of the properties of InGaAsN compounds and methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures grown by molecular beam epitaxy on GaAs substrates are reviewed. The results for different types of heterostructu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4e879df2a63e08d46f39897ddee0d636
https://doi.org/10.1134/s1063782608070105

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Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots

Autor: A. E. Zhukov, V. S. Mikhrin, A. G. Gladyshev, A. P. Vasil’ev, Elizaveta Semenova, Yu. G. Musikhin, N. N. Ledentsov, A. M. Nadtochy, V. M. Ustinov, N. V. Kryzhanovskaya, Mikhail V. Maximov

Publikováno v: physica status solidi (a). 203:1359-1364

Optical properties of self-organized QDs grown on thick metamorphic InGaAs layers with different In composition are studied. The dots are formed by an overgrowth of original InAs islands with thin InGaAs or InAlAs layers. Room temperature photolumine

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4cfd8ff6fb751de1f0188fae6088600b
https://doi.org/10.1002/pssa.200566178

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Digital data transmission using electro-optically modulated vertical-cavity surface-emitting laser with saturable absorber

Autor: Sergey A. Blokhin, Z. Qureshi, Nikolai Ledentsov, I. I. Novikov, A. M. Nadtochy, Richard V. Penty, Mikhail V. Maximov, Vitaly Shchukin, Ian H. White, L. Ya. Karachinsky, J. D. Ingham

Publikováno v: Applied Physics Letters. 104:051125

An electro-optically (EO) modulated oxide-confined vertical-cavity surface-emitting laser (VCSEL) containing a saturable absorber in the VCSEL cavity is studied. The device contains an EO modulator section that is resonant with the VCSEL cavity. A ty

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5a35f6843c8ff7ec1484136f4eb5b35a
https://doi.org/10.1063/1.4863928

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Modulation of Cell Surface Protein Free Thiols; A Potential Novel Mechanism of Action of the Sesquiterpene Lactone Parthenolide in Non-Hodgkin's Lymphoma

Autor: Craig T. Jordan, Shannon P. Hilchey, Jolanta Skalska, Margaret M. Briehl, Sanjay B. Maggirwar, Steven H. Bernstein, Paul S. Brookes, S. M Nadtochy, Monica L. Guzman

Publikováno v: Blood. 114:3774-3774

Abstract 3774 Poster Board III-710 Recent data supports the concept that redox regulation of cell surface protein thiols (i.e., exofacial thiols) effects critical cellular functions. We therefore hypothesized that redox-active anti-cancer therapeutic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0b0a92d35689545f141789442f020695
https://doi.org/10.1182/blood.v114.22.3774.3774

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