Zobrazeno 1 - 8
of 8
pro vyhledávání: '"M. N. Vijayaraghavan"'
Publikováno v:
Nano Letters. 7:896-899
We demonstrate highly reproducible silicon nanowire diodes fabricated with a fully VLSI compatible etching technology, with diameters down to 30 nm. A contact technology based on recrystallized polysilicon enables specific contact resistances as low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59091cd82d3cda5c0464338a4f00af3e
https://doi.org/10.1021/nl062681n
https://doi.org/10.1021/nl062681n
Publikováno v:
Physics of Semiconductor Devices ISBN: 9783319030012
We report on the effect of thin silicon nitride (Si3N4) induced tensile stress on the structural release of 200 nm thick SOI beam, in the surface micro-machining process. A thin (20 nm/100 nm) LPCVD grown Si3N4 is shown to significantly enhance the y
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c481b29067cb4e0367b031670fb076e7
https://doi.org/10.1007/978-3-319-03002-9_123
https://doi.org/10.1007/978-3-319-03002-9_123
Publikováno v:
Physics of Semiconductor Devices ISBN: 9783319030012
A systematic study of Gold catalyzed growth of Ge nanoneedles by PECVD at low temperatures (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1baa5826beef403382d11a2e949e7fb
https://doi.org/10.1007/978-3-319-03002-9_184
https://doi.org/10.1007/978-3-319-03002-9_184
Autor:
Adithi Umamaheswara, M. N. Vijayaraghavan, Suman Gupta, Lavendra, Smitha Nair, Navakanta Bhat
Publikováno v:
Physics of Semiconductor Devices ISBN: 9783319030012
Cantilevers made out of PECVD grown SiC films are reported here. The cantilevers were realized in two different methods—isotropic etch (Dry release) and combination of wet etch and critical point dry release. The dry release process for Silicon iso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c895d5f16a330a32a7068d72acae7453
https://igi.indrastra.com/items/show/186390
https://igi.indrastra.com/items/show/186390
Publikováno v:
Physical Review Letters. 85:5400-5403
The contribution of elementary excitations in low-dimensional electron gases to resonant inelastic light scattering is found to be determined by interband transitions involving states at specific wave vectors. In modulation-doped GaAs/GaAlAs quantum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::368fa52ae68a1c432062edda1b147825
https://doi.org/10.1103/physrevlett.85.5400
https://doi.org/10.1103/physrevlett.85.5400
Autor:
Rudra Pratap, Navakanta Bhat, P. S. Anil Kumar, P. Savitha, Srinivasan Raghavan, M. N. Vijayaraghavan, Gopal M. Hegde, T. U. M. S. Murthy
Publikováno v:
2012 19th Biennial University/Government/Industry, Micro/Nano Symposium (UGIM).
We present the evolution of the state-of-the-art multiuser, open access, Nanofab facility at the Indian Institute of Science Bangalore. The process behind the design and execution of the cleanroom will be described. The challenges faced in moving the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b29cdd0d72f1e546a6fabb35d89549e
https://doi.org/10.1109/ugim.2012.6247096
https://doi.org/10.1109/ugim.2012.6247096
Publikováno v:
IndraStra Global.
We have studied the effect of incident light on Ge/SiGe and Si/SiGe modulation doped heterostructures with both inverted and normal types of doping. We report for the first time an extremely sensitive photoresponse in modulation doped inverted $Si/Ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::21b7c01f5d5bf2d6d457c6b2405a5d61
https://igi.indrastra.com/items/show/204721
https://igi.indrastra.com/items/show/204721
Publikováno v:
IndraStra Global.
A detailed Raman analysis has been carried out to establish the mixed nature of carbon bonding in diamond films, deposited at atmospheric pressures in combustion flames. By monitoring the $sp^3$ bonded $1334 cm^{-1}$ Raman signature of diamond and $s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0508636edd7762676d5899fc12aa8e4b
https://igi.indrastra.com/items/show/205353
https://igi.indrastra.com/items/show/205353