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pro vyhledávání: '"M. N. Stus"'
Autor:
O. B. Gusev, M. Aydaraliev, S.A. Karandashov, B. A. Matveev, G. N. Talalakin, N V Zotova, M. N. Stus, M. S. Bresler
Publikováno v:
Semiconductor Science and Technology. 10:151-156
Using photoluminescence (PL) and electroluminescence (EL) measurements and calculated energy band diagrams, we have studied the mechanisms of radiation recombination in InAsSb/InAsSbP double heterostructures forming the basis of lasers emitting at 3.