Zobrazeno 1 - 10
of 26
pro vyhledávání: '"M. N. Séméria"'
Publikováno v:
Thin Solid Films. 479:113-120
We have studied the formation mechanisms and the structural features of Ge islands grown by Reduced Pressure–Chemical Vapor Deposition onto Si(001) substrates. The size, the shape, and the density of Ge islands change drastically when altering para
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af22da0d7ecdcab140f2f69ef0e24497
https://doi.org/10.1016/j.tsf.2004.11.204
https://doi.org/10.1016/j.tsf.2004.11.204
Autor:
D. Bensahel, A. Tiberj, Vincent Paillard, N. Kernevez, M. N. Séméria, Bruno Ghyselen, Hubert Moriceau, Etienne Snoeck, André Rocher, C. Di Nardo, Alain Claverie, Pascal Besson, Thomas Ernst, J.M. Hartmann, Alexandra Abbadie, Cecile Aulnette, Anne Ponchet, Fuccio Cristiano, Frank Fournel, Olivier Rayssac, M. Cabié, Francois Andrieu, I. Cayrefourq, Laetitia Vincent, Philippe Boucaud, Carlos Mazure, Y. Bogumilowicz, Benedite Osternaud, Nicolas Daval
Publikováno v:
Solid-State Electronics. 48:1285-1296
Strained silicon on insulator wafers are today envisioned as a natural and powerful enhancement to standard SOI wafers and/or bulk-like strained Si layers. This paper is intended to demonstrate through miscellaneous structural results how a layer tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80645e4dd32d70e3eedeaa9e232397ed
https://doi.org/10.1016/j.sse.2004.01.011
https://doi.org/10.1016/j.sse.2004.01.011
Autor:
J.M. Hartmann, M. N. Séméria, G. Rolland, F. Ducroquet, A. M. Papon, D. Lafond, R. Truche, F. Laugier, Thomas Ernst, P. Holliger, S. Deleonibus
Publikováno v:
Semiconductor Science and Technology. 19:593-601
We have grown by reduced pressure–chemical vapour deposition Si/Si1−yCy/Si heterostructures for electrical purposes. The incorporation of substitutional carbon atoms into Si creates a carrier confinement in the channel region of metal oxide semic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea8017c9daa2b04c30d268e759632f1e
https://doi.org/10.1088/0268-1242/19/5/007
https://doi.org/10.1088/0268-1242/19/5/007
Autor:
J.-F. Damlencourt, D. Samour, O. Renault, C. Leroux, M. N. Séméria, S. Marthon, A.M. Papon, François Martin, X. Garros
Publikováno v:
Solid-State Electronics. 47:1613-1616
In this paper, we have correlated electrical measurements of thin HfO2 layers deposited on SiO2 by atomic layer deposition with angle-resolved X-ray photoelectron spectroscopy experiments. Results show that the HfO2/Si interface layer (IL) is made of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0162115a715465a2f31960d3c5ee8fd9
https://doi.org/10.1016/s0038-1101(03)00170-9
https://doi.org/10.1016/s0038-1101(03)00170-9
Publikováno v:
Journal of Materials Science: Materials in Electronics. 14:379-382
Al2O3 and HfO2 thin layers were deposited on either 0.7-nm chemical SiO2 surface layers, HF-dipped Si surfaces or on HF-dipped Si surfaces with an innovative Cl2 surface treatment. This chemical treatment leads to the formation of one mono-layer of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::656cc2ec8037a37b30247ecb5d97a50f
https://doi.org/10.1023/a:1023904802351
https://doi.org/10.1023/a:1023904802351
Autor:
Thomas Ernst, M. N. Séméria, G. Rolland, D. Lafond, Virginie Loup, P. Holliger, J.M. Hartmann, F. Ducroquet, S. Deleonibus, F. Laugier
Publikováno v:
Journal of Applied Physics. 92:2368-2373
We have grown by reduced pressure chemical vapor deposition Si/Si1−yCy/Si heterostructures for electrical purposes. The incorporation of substitutional carbon atoms into Si creates a carrier confinement in the channel region of metal–oxide–semi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb596b8ef724746705ae4ea4c807ef9c
https://doi.org/10.1063/1.1497451
https://doi.org/10.1063/1.1497451
Autor:
L. G. Gosset, F. Martin, Isabelle Trimaille, A. Ermolieff, O. Renault, D. Rouchon, M. N. Séméria, J.-F. Damlencourt, J.-J. Ganem, Ph. Holliger
Publikováno v:
Journal of Non-Crystalline Solids. 303:17-23
Thin Al 2 O 3 layers were grown by atomic layer deposition using trimethylaluminum (TMA) and water as precursors on 1.2 nm thermal SiO 2 and HF cleaned Si surfaces. The stoichiometry and the contamination (H, OH and C) of as-deposited and N 2 anneale
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba38a8117afa9612dafb76f63c47c5c8
https://doi.org/10.1016/s0022-3093(02)00958-4
https://doi.org/10.1016/s0022-3093(02)00958-4
Autor:
G. Rolland, Denis Rouchon, C Vergnaud, C. Vannuffel, M. N. Séméria, J. Baylet, A. Chabli, F. Pierre, A. Ermolieff
Publikováno v:
Surface and Interface Analysis. 31:185-190
For a better understanding of the physical and electronic properties of emissive carbon films, one of the best ways is to compare the results obtained with several surface and structural analysis techniques. In this article, different types of carbon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e7bdfd1d9fbb4b84c65cf368b879916
https://doi.org/10.1002/sia.955
https://doi.org/10.1002/sia.955
Publikováno v:
Applied Physics Letters. 86:141913
The atomic layer deposition (ALD) of HfO2 on silicon with a Cl2 surface treatment is investigated by physicochemical and electrical techniques. The specificity of this treatment is to create, on a HF-dipped silicon surface, the nucleation sites neces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38bf7ca8fdcb9eed9c01cddd29d9c10e
https://doi.org/10.1063/1.1899237
https://doi.org/10.1063/1.1899237
Publikováno v:
Journal of The Electrochemical Society. 151:G57
New cleaning methods using diluted hydrofluoric acid (HF) in combination with an ozonized chemistry have emerged those last few years. Used after a chemical mechanical polishing (CMP) step, they significantly reduce the amounts of particles and metal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5d75e2331cc61938f08be7fac8c2609
https://doi.org/10.1149/1.1630809
https://doi.org/10.1149/1.1630809