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pro vyhledávání: '"M. N. Lobzareva"'
Publikováno v:
Inorganic Materials. 50:576-581
We have studied the kinetics of terbium oxide chemical vapor deposition using the Tb(dpm)3 com� plex. At substrate temperatures in the range 465-560°C, films ranging in thickness from 25 to 360 nm have been obtained. At precursor partial pressures
Autor:
Ilya V. Korolkov, M. N. Lobzareva, S. V. Belaya, S. V. Koshcheev, Andrei I. Boronin, V. V. Bakovets, P. A. Stabnikov
Publikováno v:
Inorganic Materials. 50:379-386
Terbium oxide films have been grown on Si(111) substrates by decomposition of Tb(dpm)3 vapor in argon flow at Tb(dpm)3 source temperatures of 170 and 190°C and substrate temperatures from 470 to 550°C. The films have been annealed in air at tempera