Zobrazeno 1 - 10
of 23
pro vyhledávání: '"M. N. Charasse"'
Publikováno v:
Journal of Applied Physics. 68:937-942
Cathodoluminescence and electron beam induced current are used to investigate the degradation of the graded‐index separate‐confining heterostructure laser devices grown on silicon substrates. By examining the evolution of the microscopic electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba3cffac51372531a4e668bca899a823
https://doi.org/10.1063/1.346656
https://doi.org/10.1063/1.346656
Publikováno v:
Journal of Electronic Materials. 19:567-573
The growth of GaAs on patterned Si substrates is essential for the integration of GaAs and Si devices. Moreover this growth may have to be done in wells to planarize the surfaces of the Si and GaAs devices for their interconnection. In this study, Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f19f04f1b5607c79a93c5a587890759b
https://doi.org/10.1007/bf02651280
https://doi.org/10.1007/bf02651280
Publikováno v:
Thin Solid Films. 184:429-436
AlGaAs/GaAs multiquantum-well (MQW) structures deposited on Si(001) substrates misoriented by 4° toward 〈110〉 have been fabricated by molecular beam epitaxy (MBE) and a combination of organo-metallic chemical vapour deposition (OMCVD) and MBE. S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87d6419d4d7850ef45c7b6772b07e041
https://doi.org/10.1016/0040-6090(90)90441-f
https://doi.org/10.1016/0040-6090(90)90441-f
Publikováno v:
Applied Physics Letters. 61:766-768
We show that x‐ray photoemission diffraction can be used as a means of detection of antiphase domains in the epitaxial growth of polar compounds on nonpolar substrates. An example is given in the case of the GaAs growth on a patterned (001) Si subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73a35f0c170346cbb04a21f3ce5ef30b
https://doi.org/10.1063/1.107792
https://doi.org/10.1063/1.107792
Publikováno v:
Applied Physics Letters. 60:350-352
Photoluminescence experiments have been carried out on erbium doped Ga0.55Al0.45As under continuous wave and pulsed laser excitation. For the first time the emissions arising from the two first Er3+ excited states 4I11/2, 4I13/2 and their temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6db281f0ac121ca5931824a5f234df1
https://doi.org/10.1063/1.106653
https://doi.org/10.1063/1.106653
Publikováno v:
Applied Physics Letters. 58:2132-2134
Time‐resolved photoluminescence (PL) spectroscopy has been performed on erbium‐doped Ga0.55Al0.45As. We have investigated the 4I13/2→4I15/2 optical transition. The measured fluorescence lifetime is around 1.2 ms which is similar to values found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13c97def5ceedc50cadc23d29b5650e8
https://doi.org/10.1063/1.104983
https://doi.org/10.1063/1.104983
Publikováno v:
Journal de Physique Colloques
Journal de Physique Colloques, 1990, 51 (C1), pp.C1-915-C1-920. ⟨10.1051/jphyscol:19901144⟩
Journal de Physique Colloques, 1990, 51 (C1), pp.C1-915-C1-920. ⟨10.1051/jphyscol:19901144⟩
The threading defects involved in the GaAs/Si heterostructure have been studied in as-grown and annealed specimens. Their origin is related to the imperfections of the interface : impurities, roughness and discontinuities of misfit dislocation networ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1291d8490f97cd648cdcd8afe02bfe2
https://hal.archives-ouvertes.fr/jpa-00230056
https://hal.archives-ouvertes.fr/jpa-00230056
Publikováno v:
Physical Review B. 31:8298-8301
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0ed2872dfdb08b152da65c4fd10aee6
https://doi.org/10.1103/physrevb.31.8298
https://doi.org/10.1103/physrevb.31.8298
Publikováno v:
Ultramicroscopy. 25:31-34
Si (KLL) Auger linescans across a GaAs/Si chemical edge (bulk sample) have been obtained at a 100 keV primary beam energy. A line resolution of 8 nm has been deduced from the FWHM measurement of the first derivative of the experimental profile. Sampl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a90b450eb1f5060a9db8d7ae5df74e8
https://doi.org/10.1016/0304-3991(88)90403-2
https://doi.org/10.1016/0304-3991(88)90403-2
Publikováno v:
Journal of Applied Physics. 58:3373-3376
We analyze in this paper the effect of thermal treatment on structural properties of GaAs/InGaAs strained‐layer superlattices grown by molecular beam epitaxy. The superlattices are analyzed using double‐crystal x‐ray rocking curves. In order to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46ca318cac206e72615501c058af5935
https://doi.org/10.1063/1.335780
https://doi.org/10.1063/1.335780