Zobrazeno 1 - 10
of 78
pro vyhledávání: '"M. N. CHANG"'
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Ming Zhao, Stephen Anthony Lynch, C. C. Hsu, Douglas J. Paul, Wei-Xin Ni, M. N. Chang, Paul D. Townsend
Publikováno v:
Thin Solid Films. 508:24-28
Si/SiGe quantum cascade structures containing superlattice up to 100 periods have been grown on SiGe virtual substrates by using solid-source molecular beam epitaxy at low temperature. The surface morphology and structural properties of the grown sam
Publikováno v:
International Journal of Nanoscience. :349-355
In this article, we have demonstrated the investigation of scanning probe microscopy on the defects induced by slight iron contamination on p-type Si wafers with ultrathin thermal oxide layer. Using scanning capacitance microscopy (SCM) associated wi
Publikováno v:
Applied Physics Letters. 84:4705-4707
This letter reports on the investigation of p+–n junction variation produced by various annealing sequences. With well-controlled photoperturbation, we have employed scanning capacitance microscopy to directly observe the junction narrowing induced
Photovoltaic effect on differential capacitance profiles of low-energy-BF2+-implanted silicon wafers
Publikováno v:
Applied Physics Letters. 82:3955-3957
Using scanning capacitance microscopy (SCM), we have studied the photovoltaic effect on differential capacitance (dC/dV) signals of low-energy-BF2+-implanted silicon wafers. The surface photovoltage induced by the stray light of the atomic force micr
Autor:
T. J. Mitchell, M. N. Chang
Publikováno v:
Coastal Engineering Practice (2011).
Autor:
M. N. Chang, L. C. Peng, J. K. Sheu, Y. Y. Yang, Wei-Chih Lai, T. H. Hsueh, S. C. Shei, C. C. Yang, C. Y. Yeh, K. H. Chang
Publikováno v:
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
Publikováno v:
Applied Physics Letters. 75:52-54
We have investigated arsenic precipitation in arsenide heterostructures grown at low temperature by molecular beam epitaxy. In these heterostructures, both doping and bond strength are found to affect arsenic precipitation during thermal annealing. F
Publikováno v:
Springer Proceedings in Physics ISBN: 9783540319146
Comparison of field emission properties between a single crystal silicon emitter and a silicon emitter array are investigated in this letter by utilizing scanning electron microscopy (SEM) and a small tungsten probe having an apex radius of approxima
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27e0d0c1c233626828d874b824668418
https://doi.org/10.1007/3-540-31915-8_75
https://doi.org/10.1007/3-540-31915-8_75
Autor:
C. C. Hsu, Paul D. Townsend, Douglas J. Paul, Ming Zhao, M. N. Chang, Stephen Anthony Lynch, Wei-Xin Ni
Publikováno v:
IEEE International Conference on Group IV Photonics, 2005. @nd.
This study presents the growth of strain-symmetric Si/SiGe THz quantum cascade structures on virtual substrates with precise layer parameters, thick active region, and high material quality. Sample characterization is done using atomic force microsco