Zobrazeno 1 - 10
of 42
pro vyhledávání: '"M. Németh‐Sallay"'
Publikováno v:
Acta Physica Hungarica. 74:65-71
The effect of Ar+ (400 keV) and Xe++ (700 keV) bombardment and consecutive annealing (250–525 °C for 10 min in forming gas) on the electrical behaviour of n-type Au/GaAs Schottky junctions are studied. The obtained anomalous I–V and C-V characte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::337d0596b68583a09757e7e955cf7da7
https://doi.org/10.1007/bf03055238
https://doi.org/10.1007/bf03055238
Publikováno v:
Journal of Crystal Growth. 126:70-76
Surface properties and morphology of the mirror-like GaAs and GaSb substrate wafers for MBE and VPE growth were studied using whole sample optical reflection (“magic mirror”, or “Makyoh” phenomenon). Samples with various surface treatments we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1695f55b04a2dc69fab7cede03047492
https://doi.org/10.1016/0022-0248(93)90227-n
https://doi.org/10.1016/0022-0248(93)90227-n
Publikováno v:
Crystal Research and Technology. 26:1091-1097
Thinning of epitaxial GaAs layers was studied during the surface etching, with a special attention to submicron epitaxial structures, like MESFET or varactor-type structures. Each chemical treatment influences the crystal surface during the device pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b9cfc693b099d30d884877b21c09f37
https://doi.org/10.1002/crat.2170260824
https://doi.org/10.1002/crat.2170260824
Publikováno v:
Vacuum. 40:179-181
The AuGe/Ni/Au metallization is one of the most widely used contact structures in compound semiconductor devices. Many laboratories use a metal structure consisting of a AuGe eutectic (88 : 12) layer with, typically, 5% Ni. The influence of Ni propor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9bf5ea47d1842bedfd3139330693e7a
https://doi.org/10.1016/0042-207x(90)90150-w
https://doi.org/10.1016/0042-207x(90)90150-w
Publikováno v:
Vacuum. 40:201-203
Recently discrepancies were obtained between the barrier heights evaluated from the I-V and C-V measurements of Au/CrGaAs Schottky contacts and between the experimental and theoretical concentration dependences of the built-in potential obtained f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ff2a3c2497745a74eef20560387179a
https://doi.org/10.1016/0042-207x(90)90156-s
https://doi.org/10.1016/0042-207x(90)90156-s
Publikováno v:
Materials Science Forum. 69:99-100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91129619da86617aa57d4c8274ef8f18
https://doi.org/10.4028/www.scientific.net/msf.69.99
https://doi.org/10.4028/www.scientific.net/msf.69.99
Publikováno v:
Acta Physica Academiae Scientiarum Hungaricae. 36:349-364
The composition, refractive index and thickness of thermally grown SiO2 layers grown onto Si single crystals were investigated by attenuated total reflection spectroscopy (ATR) and ellipsometry. Under laboratory storage conditions the value of the re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc3819ea22fa48899b127503ef96c0c3
https://doi.org/10.1007/bf03158127
https://doi.org/10.1007/bf03158127
Publikováno v:
Thin Solid Films. 94:143-148
It was shown earlier that there is a peak at about 260 K in the thermostimulated current spectrum of metal/oxide/semiconductor structures treated by a standard procedure. In this paper we report further results obtained by analysing the origin of thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4715f1aeabbc28bfbf8730408381771a
https://doi.org/10.1016/0040-6090(82)90506-5
https://doi.org/10.1016/0040-6090(82)90506-5
Publikováno v:
Physica Status Solidi (a). 24:K1-K5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::312dcd0ce46bf1024afe5f0b28a5a99c
https://doi.org/10.1002/pssa.2210240137
https://doi.org/10.1002/pssa.2210240137
Publikováno v:
Thin Solid Films. 36:251-255
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf093239b3c2c35c6a54f445e6c96910
https://doi.org/10.1016/0040-6090(76)90452-1
https://doi.org/10.1016/0040-6090(76)90452-1