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pro vyhledávání: '"M. Muske"'
Akademický článek
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Autor:
Stefan Gall, K.Y. Lee, Jan D'Haen, Bernd Rech, M. Berginski, Ivan Gordon, M. Muske, Jürgen Hüpkes
Publikováno v:
Thin Solid Films. 516:6869-6872
Thin film polycrystalline silicon (poly-Si) films have been fabricated by the aluminium-induced layer exchange (ALILE) process on ZnO:Al coated glass. The formation of the poly-Si films was observed during the annealing process using an optical micro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::750a77c482115781a97bc04cdb5894a0
https://doi.org/10.1016/j.tsf.2007.12.128
https://doi.org/10.1016/j.tsf.2007.12.128
Publikováno v:
Thin Solid Films. 515:7465-7468
The aluminium-induced layer-exchange process allows to grow thin large-grained polycrystalline Si films on foreign substrates. A characteristic feature of these films is the preferential (100) orientation of Si grains, favourable for subsequent epita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e49a90cf82be776ac7161f97d8826f7
https://doi.org/10.1016/j.tsf.2006.11.124
https://doi.org/10.1016/j.tsf.2006.11.124
Publikováno v:
Thin Solid Films. 515:3740-3744
The aluminium induced layer exchange process is used for growing crystalline Si films on amorphous substrates like glass, which are further epitaxially thickened and can be used for photovoltaic applications. In this work we investigated Al 2 O 3 mem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11bd54415335a73ad714ab401b6d778b
https://doi.org/10.1016/j.tsf.2006.09.038
https://doi.org/10.1016/j.tsf.2006.09.038
Autor:
E. Conrad, K. Petter, B. Rau, Jens Schneider, Klaus Lips, Stefan Gall, Michael Stöger-Pollach, M. Muske, Walther Fuhs, J. Klein, Peter Schattschneider, I. Sieber, K. Hübener
Publikováno v:
Thin Solid Films. :7-14
Large-grained polycrystalline silicon (poly-Si) films were prepared on glass using the 'seed layer concept' which is based on the epitaxial thickening of large-grained seed layers. The aluminium-induced layer exchange (ALILE) process was used to form
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17b8df0ee79d1c42a372b4f1fe296baa
https://doi.org/10.1016/j.tsf.2005.12.067
https://doi.org/10.1016/j.tsf.2005.12.067
Publikováno v:
Journal of Non-Crystalline Solids. 352:980-983
In this work, Si grain nucleation during the aluminium-induced layer-exchange (ALILE) process is studied theoretically. A combined kinetic and thermodynamic model is derived to describe the nucleation and initial growth of Si grains. In the framework
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1869b212f88bd2b6c8a62e4c1cb649f
https://doi.org/10.1016/j.jnoncrysol.2005.12.048
https://doi.org/10.1016/j.jnoncrysol.2005.12.048
Publikováno v:
Journal of Non-Crystalline Solids. 352:972-975
The formation of polycrystalline silicon (poly-Si) films by Al-induced crystallization (ALILE process) was studied in situ by optical microscopy. The characteristic feature of this process is that nucleation is strongly suppressed after an initial nu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a258523198e9be6e793132a15dc40f5f
https://doi.org/10.1016/j.jnoncrysol.2005.09.036
https://doi.org/10.1016/j.jnoncrysol.2005.09.036
Publikováno v:
Journal of Crystal Growth. 287:442-445
In this work, the initial stage of the aluminium-induced layer-exchange (ALILE) process is studied theoretically. The diffusion of silicon atoms from an amorphous Si layer into an Al layer through a permeable membrane prior to Si grain nucleation wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::817a9d9b81259fc6d8b4b203e2558cee
https://doi.org/10.1016/j.jcrysgro.2005.11.061
https://doi.org/10.1016/j.jcrysgro.2005.11.061
Autor:
H.S. Reehal, Stefan Gall, I. Sieber, J. Klein, Jens Schneider, T. Quinn, Walther Fuhs, M. Muske, Andrey Sarikov
Publikováno v:
Journal of Crystal Growth. 287:423-427
In the aluminum-induced layer exchange process polycrystalline silicon thin films can be formed on foreign substrates at low temperatures. These films exhibit a preferential (1 0 0) crystal orientation, that depends on the annealing temperature. Furt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cada3e0e0cdba0383af218638d0132c
https://doi.org/10.1016/j.jcrysgro.2005.11.057
https://doi.org/10.1016/j.jcrysgro.2005.11.057
Publikováno v:
Thin Solid Films. 487:107-112
Annealing of amorphous silicon/aluminum layer stacks below the eutectic temperature leads to a layer exchange and concurrent crystallization of silicon. The resulting polycrystalline silicon layers are of great interest for large area thin film devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c8329b69303ec33f2d1cbe2501d8fe7
https://doi.org/10.1016/j.tsf.2005.01.046
https://doi.org/10.1016/j.tsf.2005.01.046