Zobrazeno 1 - 10
of 366
pro vyhledávání: '"M. Miura-Mattausch"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 913-919 (2022)
Adaptive threshold-voltage controlling of thin-film multi-gate (MG) MOSFETs, using independent back-gate biasing, is applied for realizing latency and power optimization. The controlling-method validity for low-voltage operation is analyzed with the
Externí odkaz:
https://doaj.org/article/ddb2d3a01b0643d6888731ee8f3836e2
Autor:
F. Avila Herrera, Y. Hirano, M. Miura-Mattausch, T. Iizuka, H. Kikuchihara, H. J. Mattausch, A. Ito
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1381-1389 (2020)
A compact multi-gate MOSFET model is developed for high-voltage applications. The model includes the short-channel effects specific for thin-film MOSFETs with highly resistive drain contact. The short-channel effects are drastically reduced by the dr
Externí odkaz:
https://doaj.org/article/a7af63a4184048dd868b8c8987e7967e
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1373-1380 (2020)
The trench-type IGBT is one of the major devices developed for very high-voltage applications, and has been widely used for the motor control of EVs as well as for power-supply systems. In the reported investigation, the accurate prediction of the po
Externí odkaz:
https://doaj.org/article/bb25b902d2f14d1b85f3dc753b4a1141
Publikováno v:
IEEE Transactions on Electron Devices. 69:5456-5461
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5b5153c2d345e4c4a3466486308b814
https://doi.org/10.1109/ted.2022.3201064
https://doi.org/10.1109/ted.2022.3201064
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789819900541
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b552258f16efac0762235dc6f03fabba
https://doi.org/10.1007/978-981-99-0055-8_37
https://doi.org/10.1007/978-981-99-0055-8_37
Akademický článek
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Autor:
Yosuke Miyaoku, Hans Juergen Mattausch, A. Tone, Kai Matsuura, M. Miura-Mattausch, Daisaku Ikoma
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1373-1380 (2020)
The trench-type IGBT is one of the major devices developed for very high-voltage applications, and has been widely used for the motor control of EVs as well as for power-supply systems. In the reported investigation, the accurate prediction of the po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cdcf27b84698e09d2ac4d888c44ebe21
https://ieeexplore.ieee.org/document/9139474/
https://ieeexplore.ieee.org/document/9139474/
Autor:
F. Avila Herrera, Y. Hirano, Hans Juergen Mattausch, Takahiro Iizuka, Akira Ito, Hideyuki Kikuchihara, M. Miura-Mattausch
Publikováno v:
IEEE Transactions on Electron Devices. 66:3726-3733
Silicon-thickness scaling has been used as the main parameter for short-channel-effect (SCE) reduction. Nevertheless, SCEs are still present in advanced thin-layer MOSFETs. Here, for enlarging the insight into SCE suppression, a new compact model is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::540c7022423adb2a9c1b19413635e3da
https://doi.org/10.1109/ted.2019.2931749
https://doi.org/10.1109/ted.2019.2931749
Autor:
Hideyuki Kikuchihara, Yosuke Miyaoku, Hans Juergen Mattausch, U. Feldmann, A. Tone, M. Miura-Mattausch, Takashi Saito, Takao Yamamoto, Takeshi Mizoguchi
Publikováno v:
IEEE Transactions on Electron Devices. 66:3265-3272
The second generation of the compact HiSIM_IGBT model for circuit simulation is reported. HiSIM_IGBT2 is developed on the basis of an adapted version of the high-voltage mosfet model HiSIM_HV and solves the Poisson equation along the complete device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4c91d6bd43fbdcb318aeb3778f06f8f
https://doi.org/10.1109/ted.2019.2919799
https://doi.org/10.1109/ted.2019.2919799
Publikováno v:
Advanced Materials Letters. 9:123-127
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99bc1c4e63f340678615409ea17a8dc3
https://doi.org/10.5185/amlett.2018.1878
https://doi.org/10.5185/amlett.2018.1878