Zobrazeno 1 - 10
of 334
pro vyhledávání: '"M. Mehregany"'
Publikováno v:
Journal of The Electrochemical Society. 158:H675-H680
This paper details the development of low residual stress and low stress gradient unintentionally doped polycrystalline SiC (poly-SiC) thin films. The films were deposited in a large-volume, low-pressure chemical vapor deposition (LPCVD) furnace on 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35d6b3e4da1eff8e40fe706014c183e9
https://doi.org/10.1149/1.3575160
https://doi.org/10.1149/1.3575160
Publikováno v:
Nano Letters. 10:2891-2896
We report experimental demonstrations of electrostatically actuated, contact-mode nanoelectromechanical switches based on very thin silicon carbide (SiC) nanowires (NWs). These NWs are lithographically patterned from a 50 nm thick SiC layer heteroepi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bda07edf2214781fa7d072d4f0bab2d4
https://doi.org/10.1021/nl1009734
https://doi.org/10.1021/nl1009734
Autor:
M. Mehregany, Michael J. Krasowski, Glenn M. Beheim, Philip G. Neudeck, Steven L. Garverick, David J. Spry, Liang-Yu Chen
Publikováno v:
Silicon Carbide: Power Devices and Sensors, Volume 2
Extreme temperature semiconductor integrated circuits (ICs) are being developed for use in the hot sections of aircraft engines and other harsh-environment applications well above the 300 °C effective limit of silicon-on-insulator IC technology. Thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28c66d46a7a87357c3cd9364c9fabd68
https://doi.org/10.1002/pssa.200925188
https://doi.org/10.1002/pssa.200925188
Publikováno v:
IEEE Transactions on Advanced Packaging. 32:564-574
This paper describes a detailed investigation of an ultrasonic nickel wire bonding technique for silicon carbide (SiC) devices, and its comparison with a thermosonic wire bonding process, for high-temperature applications. The study focuses on bondin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3185633c4bc5ba72a0bff798b5e1f643
https://doi.org/10.1109/tadvp.2009.2015593
https://doi.org/10.1109/tadvp.2009.2015593
Autor:
Li Chen, M. Mehregany
Publikováno v:
Sensors and Actuators A: Physical. :2-8
This paper reports a research prototype of a low-cost, miniature, mass-producible sensor for measurement of high-pressure at operating temperatures of 300–600 °C, e.g., in-cylinder engine pressure monitoring applications. This all-silicon carbide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e64d1ca5cdadfe59601b61caef5e3bc
https://doi.org/10.1016/j.sna.2007.09.015
https://doi.org/10.1016/j.sna.2007.09.015
Publikováno v:
Science. 329:1316-1318
High-Temperature Electronic Switching In electronic circuitry, the band gap of a semi-conductor helps to provide the barrier that keeps charge carriers from flowing until a voltage is applied that switches the device. As temperatures rise, the carrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8db62b69a55e4bf3d1aecaad00c8a590
https://doi.org/10.1126/science.1192511
https://doi.org/10.1126/science.1192511
Autor:
T. P. Smith, Christian A. Zorman, Kevin J. Linthicum, Eric Carlson, Darren B. Thomson, M. Mehregany, Thomas Gehrke, Tsvetanka Zheleva, Kieran Mark Tracy, Robert F. Davis
Publikováno v:
Scopus-Elsevier
ResearcherID
ResearcherID
GaN films have been grown on 6H-SiC substrates employing a new form of selective lateral epitaxy, namely pendeo-epitaxy. This technique forces regrowth to start exclusively on sidewalls of GaN seed structures. Both discrete pendeo-epitaxial microstru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6adc7b70e7fe78258d040bd15e50eb72
https://doi.org/10.1557/s1092578300002921
https://doi.org/10.1557/s1092578300002921
Publikováno v:
Journal of Microelectromechanical Systems. 3:126-133
A simple fabrication process for rapid prototyping of side-drive polysilicon micromotors has been developed. This process uses three low-pressure chemical vapor depositions and three photolithography steps, and it enables fabrication of new micromoto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f952571931951a038f4f91a4d347136
https://doi.org/10.1109/84.338633
https://doi.org/10.1109/84.338633
Publikováno v:
ChemInform. 41
A microfabricated electromechanical inverter with SiC nanoelectromechanical system switches is developed that is capable of operating at 500 °C with ultralow leakage current achieving virtually zero off-state current, microwave operating frequencies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53c0f12bf7dcb52b3e51b56b916390c3
https://doi.org/10.1002/chin.201049221
https://doi.org/10.1002/chin.201049221
Publikováno v:
ChemInform. 30
Silicon carbide (SiC) is a promising material for the development of high-temperature solid-state electronics and transducers, owing to its excellent electrical, mechanical, and chemical properties. This paper is a review of silicon carbide for micro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2628a46358d2a8f0689ddfbe643272b9
https://doi.org/10.1002/chin.199903248
https://doi.org/10.1002/chin.199903248