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Autor:
P. Lysaght, JaeEun Lim, Eric Shero, M. Freiler, K. Torres, G. Bersuker, Christophe F. Pomarede, C. Werkhoven, R. Bergmann, Michael Eugene Givens, D. Riley, J. Chen, P. M. Zeitzoff, B. Foran, Chadwin D. Young, G. Gebara, A. Agarwal, H. R. Huff, A. Hou, D. Derro, F. Shaapur, R.W. Murto, S. Borthakur, Hong-Jyh Li, B. Nguyen, Joel Barnett, G. A. Brown, Y. Kim, M. Mazanez
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
Conventional self-aligned MOSFET transistors with poly-silicon gate-electrode were successfully fabricated using Hf-oxide and Zr-oxide as high-k gate-dielectrics. The gate-stack consisting of poly-silicon on Hf-oxide exhibited promising transistor ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e991fb7f17bd2f463290502b8f5a6569
https://doi.org/10.1109/iedm.2001.979538
https://doi.org/10.1109/iedm.2001.979538
