Zobrazeno 1 - 10
of 18
pro vyhledávání: '"M. Mattalah"'
Autor:
Ali Soltani, Brahim Benbakhti, S. J. Duffy, K. Ahmeda, Hassane Ouazzani Chahdi, M. Boucherta, Karol Kalna, Nour Eddine Bourzgui, Weidong Zhang, M. Mattalah
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩
IEEE Transactions on Electron Devices, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩
IEEE Transactions on Electron Devices, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩
International audience; A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN high-electron mobility transistors (HEMTs) under a normal device operation: self-heating and charge
Autor:
Meriem Bouchilaoun, Hassan Maher, Brahim Benbakhti, Weidong Zhang, Nour-Eddine Bourzgui, M. Mattalah, S. J. Duffy, Ali Soltani, Karol Kalna, M. Boucherta
Publikováno v:
UK Semiconductors
UK Semiconductors, Jul 2017, Sheffield, United Kingdom. pp.S3040-S3043, ⟨10.1149/2.0111711jss⟩
ECS Journal of Solid State Science and Technology
ECS Journal of Solid State Science and Technology, IOP Science, 2017, 6 (11), pp.S3040-S3043. ⟨10.1149/2.0111711jss⟩
ECS Journal of Solid State Science and Technology, 2017, 6 (11), pp.S3040-S3043. ⟨10.1149/2.0111711jss⟩
UK Semiconductors, Jul 2017, Sheffield, United Kingdom. pp.S3040-S3043, ⟨10.1149/2.0111711jss⟩
ECS Journal of Solid State Science and Technology
ECS Journal of Solid State Science and Technology, IOP Science, 2017, 6 (11), pp.S3040-S3043. ⟨10.1149/2.0111711jss⟩
ECS Journal of Solid State Science and Technology, 2017, 6 (11), pp.S3040-S3043. ⟨10.1149/2.0111711jss⟩
International audience; An optimized fabrication process of ohmic contacts is proposed to reduce the source/drain access resistance (RC) and enhance DC/RF performance of AlGaN/GaN HEMTs with a high Al concentration. We show that source/drain RC can b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31512c2d193266e86340cd3bf9472521
https://cronfa.swan.ac.uk/Record/cronfa35704/Download/0035704-03102017150650.pdf
https://cronfa.swan.ac.uk/Record/cronfa35704/Download/0035704-03102017150650.pdf
Autor:
Yvon Cordier, J.-C. De Jaeger, Ali Soltani, Az. Ahaitouf, M. Mattalah, J.-C. Gerbedoen, Nicolas Defrance
Publikováno v:
physica status solidi (c)
physica status solidi (c), Wiley, 2012, 9, pp.1083-1087. ⟨10.1002/pssc.201100211⟩
physica status solidi (c), 2012, 9, pp.1083-1087. ⟨10.1002/pssc.201100211⟩
physica status solidi (c), Wiley, 2012, 9, pp.1083-1087. ⟨10.1002/pssc.201100211⟩
physica status solidi (c), 2012, 9, pp.1083-1087. ⟨10.1002/pssc.201100211⟩
This work describes a study regarding the SiO2/Si3N4 passivation layer thickness effect on the Au/Mo/ Al0.25Ga0.75N/GaN/Si (111) rectifier contact behaviour. Two total different thicknesses of SiO2/Si3N4dielectric are deposited on AlGaN/GaN with diff
Publikováno v:
Thin Solid Films
Thin Solid Films, Elsevier, 2008, 516, pp.4122-4127. ⟨10.1016/j.tsf.2007.10.009⟩
Thin Solid Films, 2008, 516, pp.4122-4127. ⟨10.1016/j.tsf.2007.10.009⟩
Thin Solid Films, Elsevier, 2008, 516, pp.4122-4127. ⟨10.1016/j.tsf.2007.10.009⟩
Thin Solid Films, 2008, 516, pp.4122-4127. ⟨10.1016/j.tsf.2007.10.009⟩
Deep level transient spectroscopy (DLTS) and photoluminescence (PL) techniques are used to study the defects occurring at the interface between hexagonal Boron Nitride (hBN) films and n-type Indium Phosphide (n-InP). The BN films are deposited on InP
Autor:
Ali Soltani, Arnaud Stolz, M. Rousseau, Ali BenMoussa, H.A. Barkad, J.-C. De Jaeger, M. Mattalah, Joël Charrier, J.-C. Gerbedoen, Vincent Mortet, N. Bourzgui
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2014, 115, pp.163515. ⟨10.1063/1.4873236⟩
Journal of Applied Physics, 2014, 115 (16), pp.163515. ⟨10.1063/1.4873236⟩
Journal of Applied Physics, American Institute of Physics, 2014, 115, pp.163515. ⟨10.1063/1.4873236⟩
Journal of Applied Physics, 2014, 115 (16), pp.163515. ⟨10.1063/1.4873236⟩
The authors are grateful to John Jackson from Metricon Corp., for the technical support provided.; International audience; Optical waveguiding properties of a thick wurtzite aluminum nitride highly [002]-textured hetero-epitaxial film on (001) basal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a5936a4e493591e95a9212780c8a044d
https://hal.archives-ouvertes.fr/hal-00987345
https://hal.archives-ouvertes.fr/hal-00987345
Publikováno v:
Diamond and Related Materials
Diamond and Related Materials, Elsevier, 2009, 18, pp.1039-1042. ⟨10.1016/j.diamond.2009.02.018⟩
Diamond and Related Materials, 2009, 18, pp.1039-1042. ⟨10.1016/j.diamond.2009.02.018⟩
Diamond and Related Materials, Elsevier, 2009, 18, pp.1039-1042
HAL
Diamond and Related Materials, 2009, 18, pp.1039-1042
Diamond and Related Materials, Elsevier, 2009, 18, pp.1039-1042. ⟨10.1016/j.diamond.2009.02.018⟩
Diamond and Related Materials, 2009, 18, pp.1039-1042. ⟨10.1016/j.diamond.2009.02.018⟩
Diamond and Related Materials, Elsevier, 2009, 18, pp.1039-1042
HAL
Diamond and Related Materials, 2009, 18, pp.1039-1042
Metal/Insulator/Semiconductor AlGaN/GaN High Electron Mobility Transistors (MISHEMTs) on sapphire substrate were fabricated with hexagonal Boron Nitride (hBN) thin film as gate dielectric. The hBN thin film, deposited by MW-PECVD, is an insulator per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::43b3562e6442c17dbdb982e1ea49437b
https://hal.archives-ouvertes.fr/hal-00435395
https://hal.archives-ouvertes.fr/hal-00435395
Autor:
M. Rousseau, A. Telia, M. Mattalah, Nour-Eddine Bourzgui, J.-C. Gerbedoen, P. L. Bonanno, Ali BenMoussa, Abdallah Ougazzaden, Gilles Patriarche, Ali Soltani
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 2014, 104, 233506, 5 p. ⟨10.1063/1.4882415⟩
Applied Physics Letters, American Institute of Physics, 2014, 104, 233506, 5 p. ⟨10.1063/1.4882415⟩
Applied Physics Letters, 2014, 104, 233506, 5 p. ⟨10.1063/1.4882415⟩
Applied Physics Letters, American Institute of Physics, 2014, 104, 233506, 5 p. ⟨10.1063/1.4882415⟩
High performance titanium nitride sub-100 nm rectifying contact, deposited by sputtering on AlGaN/GaN high electron mobility transistors, shows a reverse leakage current as low as 38 pA/mm at VGS = -40 V and a Schottky barrier height of 0.95 eV. Base
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