Zobrazeno 1 - 10
of 406
pro vyhledávání: '"M. Masahara"'
Autor:
Hiromi Yamauchi, M. Masahara, Y. X. Liu, Hiroyuki Ota, Yukinori Morita, Shin-ichi O'uchi, Kazuhiko Endo, Takashi Matsukawa, Shinji Migita, Yoshie Ishikawa, Wataru Mizubayashi, Junichi Tsukada
Publikováno v:
Microelectronic Engineering. 147:290-293
Display Omitted Triangular fin channel double-gate MOSFETs were fabricated on SOTB.A high threshold voltage shift was obtained in triangular fin devices.A smaller variability was confirmed in triangular fin devices by wet etching.Uniform line edges o
Autor:
Hiroyuki Ota, Hiromi Yamauchi, Koichi Fukuda, Y. X. Liu, Kazuhiko Endo, Takahiro Mori, Junichi Tsukada, Wataru Mizubayashi, M. Masahara, Yoshie Ishikawa, Yukinori Morita, Shinji Migita, Shin-ichi O'uchi, A. Tanabe, Takashi Matsukawa
Publikováno v:
Solid-State Electronics. 111:62-66
We investigated the impact of fin length ( T fin ) on the threshold voltage ( V th ) modulation by back bias ( V b ) for independent double-gate (IDG) tunnel fin field-effect transistors (tFinFETs). It was found that V th can be tuned by V b for IDG
Autor:
T. Matsukawa, M. Masahara, K. Fukuda, W. Mizubayashi, Hiroyuki Ota, H. Asai, Takahiro Mori, S. Migita, K. Endo, J. Hattori, Y. Morita
Publikováno v:
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.
Autor:
Hiromi Yamauchi, S. Migita, Yoshie Ishikawa, H. Ota, Takashi Matsukawa, M. Masahara, Toshihide Nabatame, Toyohiro Chikyow, Y. Morita, W. Mizubayashi, Kazuhiko Endo, Junichi Tsukada, Shin-ichi O'uchi, Yongxun Liu
Publikováno v:
ECS Transactions. 61:263-280
Y. X. Liu, T. Matsukawa, K. Endo, S. O’uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, and M. Masahara National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezo
Autor:
M. Masahara, Koichi Fukuda, Yukinori Morita, Y. X. Liu, Hiroyuki Ota, Shin-ichi O'uchi, Junichi Tsukada, Shinji Migita, Yasuaki Ishikawa, Wataru Mizubayashi, K. Endo, Takahiro Mori, Hiromi Yamauchi, Takashi Matsukawa
Publikováno v:
Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials.
Autor:
Y. Morita, K. Fukuda, Y. Liu, T. Mori, W. Mizubayashi, S. O'uchi, H. Fuketa, S. Otsuka, S. Migita, M. Masahara, K. Endo, H. Ota, T. Matsukawa
Publikováno v:
Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials.
Autor:
K. Fukuda, T. Mori, H. Asai, J. Hattori, W. Mizubayashi, Y. Morita, H. Fuketa, S. Migita, H. Ota, M. Masahara, K. Endo, T. Matsukawa
Publikováno v:
Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials.
Autor:
Takashi Matsukawa, Y.-J Lee, Yoshie Ishikawa, Hiromi Yamauchi, Y. X. Liu, M. Masahara, F.-K. Hsueh, Junichi Tsukada, Shin-ichi O'uchi, Kazuhiko Endo, P.-J. Sung
Publikováno v:
2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
FinFETs with the low temperature microwave annealing process have been successfully fabricated and the superiority of the microwave annealing process has been precisely studied. For the first time, it is revealed that the microwave annealed FinFET ex
Autor:
Junichi Tsukada, M. Masahara, Yongxun Liu, Yuki Ishikawa, Kazuhiko Endo, Hiroyuki Ota, Wataru Mizubayashi, Hiromi Yamauchi, Yukinori Morita, Shin-ichi O'uchi, Takashi Matsukawa, Shinji Migita, Kunihiro Sakamoto
Publikováno v:
IEEE Transactions on Electron Devices. 59:2003-2010
ON-current (Ion) variability is comprehensively investigated for fin-shaped FETs (FinFETs) by measurement-based analysis. Variation sources of Ion are successfully extracted as independent contributions of threshold voltage Vt, transconductance Gm, a
Autor:
Kazuhiko Endo, Kunihiro Sakamoto, Hiromi Yamauchi, Shin-ichi O'uchi, Junichi Tsukada, Yuki Ishikawa, M. Masahara, Yongxun Liu, Takashi Matsukawa
Publikováno v:
IEEE Transactions on Electron Devices. 59:1345-1352
A correlation between the characteristics of the 30-nm LG fin-shaped field-effect transistors and the static random-access memory performance is precisely studied. By investigating an effect of the Vth variation to the static noise margin (SNM) varia