Zobrazeno 1 - 10 of 31 pro vyhledávání: '"M. Marcisovska"'
1
Monte-Carlo simulation of charge sharing in 2 mm thick pixelated CdTe sensor
Autor: J. Jirsa, J. Gecnuk, Z. Janoska, J. Jakovenko, V. Kafka, M. Marcisovsky, M. Marcisovska, P. Stanek, L. Tomasek, P. Vancura
Publikováno v: Journal of Instrumentation. 18:C02033
Precise physical models of sensors are essential for developing high precision pixelated detectors. Advanced technologies allowed pixel electronics to be integrated in tens of micrometers pixel pitch. Such fine pixelated detectors suffer from charge
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0ff8c4be7f570398bf8862c02f115e39
https://doi.org/10.1088/1748-0221/18/02/c02033
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2
Characterization of 3.2 Gbps readout in 65 nm CMOS technology
Autor: J. Jirsa, J. Gecnuk, M. Havranek, Z. Janoska, M. Jansky, V. Kafka, O. Korchak, A. Kostina, D. Lednicky, M. Marcisovska, M. Marcisovsky, P. Stanek, L. Tomasek, P. Vancura
Publikováno v: Journal of Instrumentation. 18:C01055
A new class of photon-counting pixel detectors allows for capturing of an image in several photon energy bins in one shot. A decreased pixel pitch and an increased number of energy bins are needed to enhance the spatial and spectral resolution of the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ed8e9a2b423b7f97a0bf744c0b815458
https://doi.org/10.1088/1748-0221/18/01/c01055
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3
Runaway electrons diagnostics using segmented semiconductor detectors
Autor: Vojtech Svoboda, Jakub Urban, Vladimir Weinzettl, Pavel Vancura, Ondrej Ficker, Eva Macusova, M. Marcisovsky, Miroslav Havranek, Vladimír Linhart, J. Cerovsky, L. Tomasek, Z. Janoska, A. Casolari, Peter Svihra, Pravesh Dhyani, M. Farnik, Jozef Varju, Vaclav Vrba, M. Marcisovska, M. Hejtmanek, G. Neue, V. Kafka, David Bren, Lukas Novotny, Jan Mlynar, Petr Kulhánek
Publikováno v: Fusion Engineering and Design. 146:316-319
A novel application of strip and pixel silicon radiation detectors for study and characterization of run-away electron events in tokamaks is presented. Main goal was to monitor runaway electrons both directly and indirectly. The strip detector was pl
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1f9c74a5cfaab7880c5ae407dfa31aa6
https://doi.org/10.1016/j.fusengdes.2018.12.054
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4
Radiation hardness of PantherPix hybrid pixel detector
Autor: D. Dudas, V. Kafka, M. Marcisovsky, G. Neue, M. Marcisovska, P. Prusa, I. Koniarova, M. Semmler
Publikováno v: Journal of Instrumentation. 16:P12007
Hybrid pixel detectors (HPD) are nowadays well known and widely used in fundamental research, e.g. in high energy physics experiments. Over the last decade, segmented semiconductor detectors have also found use in medicine. The total doses received b
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8406c8edf959982b9f54250d3461486b
https://doi.org/10.1088/1748-0221/16/12/p12007
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5
Akademický článek
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7
TID and SEU testing of the novel X-CHIP-03 monolithic pixel detector
Autor: J. Popule, A. Kabatova, Semen Mitrofanov, A. Kostina, M. Marcisovsky, Miroslav Havranek, Anna Macková, L. Tomasek, V. Kafka, Vaclav Vrba, Oleksandr Romanenko, M. Marcisovska, D. Dudas
Publikováno v: Journal of Instrumentation. 15:C01043-C01043
We present a SEE and TID effect study of the novel monolithic pixel detector, X-CHIP-03, manufactured in a 180 nm SOI technology. The SEU cross section of the custom D flip-flops in the X-CHIP-03 ASIC has been evaluated using accelerated ions with LE
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2830233fd910f2e6a7718bb54fb9ad76
https://doi.org/10.1088/1748-0221/15/01/c01043
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8
A study of single event effects induced by heavy charged particles in 180 nm SoI technology
Autor: T. Benka, Petr Suchanek, Matej Vaculciak, V. Kafka, G. Neue, Vladimir A. Skuratov, Anezka Kabatova, Miroslav Finger, Vaclav Vrba, Michal Marcisovsky, Jiri Popule, Pavel Vancura, Semen Mitrofanov, M. Marcisovska, M. Hejtmanek, Miroslav Havranek, Z. Janoska, L. Tomasek, Peter Svihra
Publikováno v: 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC).
This article presents a measurement of the SEU bit-flip cross section of the X-CHIP-03 ASIC manufactured in a 180 nm PDSoI technology. The measurements were performed using a shift register in the X-CHIP-03 ASIC made with custom D flip-flops. The bit
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::495fc3cca5f9c6b696de4f06f1bb9514
https://doi.org/10.1109/nssmic.2018.8824677
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9
Akademický článek
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