Zobrazeno 1 - 10
of 85
pro vyhledávání: '"M. M. TASHIMA"'
Autor:
A. M. Pereira, J. C.B. Moraes, M. J.B. Moraes, J. L. Akasaki, M. M. Tashima, L. Soriano, J. Monzó, J. Payá
Publikováno v:
Materiales de Construccion, Vol 68, Iss 330, Pp e153-e153 (2018)
Portland cement (OPC) production is one of the most contaminating greenhouse gas producing activities. In order to reduce OPC consumption, several alternatives are being assessed, and the use of pozzolanic material is one of them. This paper presents
Externí odkaz:
https://doaj.org/article/9d76755f9c2347c2bbc9f2639fb1527c
Publikováno v:
Materiales de Construccion, Vol 64, Iss 316, Pp e032-e032 (2014)
A very simple method based on electrical conductivity and pH measurements was proposed for assessing reactivity of pozzolans. Calcium hydroxide:pozzolan water suspensions were monitored by means of measurements of electrical conductivity and pH value
Externí odkaz:
https://doaj.org/article/d2da7d746c254933af133f7f7391090a
Autor:
M. B. Barbosa, A. M. PEREIRA, J. L. Akasaki, C. F. Fioriti, J. V. Fazzan, M. M. TASHIMA, J. J. P. Bernabeu, J. L. P. Melges
Publikováno v:
Revista IBRACON de Estruturas e Materiais, Vol 6, Iss 5, Pp 811-820
The paper discusses the application of High Strength Concrete (HSC) technology for concrete production with the incorporation of Rice Husk Ash (RHA) residues by replacing a bulk of the material caking and rubber tires with partial aggregate volume, a
Externí odkaz:
https://doaj.org/article/6981bd03c870414980616f1b819f07ec
Publikováno v:
Applied Physics Letters. 32:758-761
The distribution coefficients for the growth of lattice‐matched InGaAsP on (100) ‐InP substrates in the 1.15–1.31‐μm spectral range have been determined. These results have been used in the growth of heterojunction photodiodes with quantum e
Publikováno v:
Applied Physics Letters. 33:533-536
The dependence of the surface morphology and the interface misfit dislocation density on the amount of lattice mismatch varies considerably with the composition of the quaternary material in the 1.15–1.31‐μm band‐gap range. For the same amount
Publikováno v:
Journal of Electronic Materials. 9:241-280
Constant composition InGaAsP epitaxial layers can be grown on (100) InP substrates at a constant temperature using the diffusion-limited step-cooling growth technique, and in general, compositionally graded layers result when the diffusion-limited eq
Publikováno v:
Applied Physics Letters. 34:292-295
In experiments on the LPE growth of InGaAsP on (100) ‐InP substrates, it has been found that constant‐composition epitaxial layers can be grown at constant temperature using the step‐cooling technique, while the equilibrium‐cooling, supercool
Publikováno v:
Journal of Crystal Growth. 56:475-484
Methods for obtaining high purity InP and InGaAsP alloy epitaxial layers on (100)-oriented InP substrates using liquid phase epitaxy have been explored and are discussed. Net carrier concentrations as low as 9 X 1014 cm-3 for InP and 2 X 1014 cm-3 fo
Publikováno v:
Journal of Electronic Materials. 11:831-846
Minority carrier diffusion lengths were determined for InGaAsP and InGaAs layers grown by liquid phase epitaxy on (100)-InP substrates by measuring the variation of the short circuit photocurrent as a focussed laser beam was scanned along a beveled (
Publikováno v:
Journal of Electronic Materials. 13:437-446
The epitaxial growth of AlGaAs of LED quality by OM-VPE is achieved either by using high growth temperatures (≥780°C) or by using oxygen gettering methods and low growth temperatures (≤750°C). For 6% AlGaAs, the most studied composition in this