Zobrazeno 1 - 10
of 23
pro vyhledávání: '"M. M. Rozhavskaya"'
Autor:
M. M. Rozhavskaya, L. M. Sorokin, A. V. Myasoedov, S. I. Troshkov, A. F. Tsatsul’nikov, V. V. Lundin, A. V. Osipov, S. A. Kukushkin
Publikováno v:
Physics of the Solid State. 57:1899-1907
This paper presents the results of the electron microscopic study of GaN/AlGaN/AlN/SiC/Si(111) structures grown by the metal-organic vapor phase epitaxy. A SiC epitaxial buffer nanolayer has been grown by a new method of substitution of atoms on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::130a7cea1d7cbb61e63f2db1073ca758
https://doi.org/10.1134/s1063783415090218
https://doi.org/10.1134/s1063783415090218
Publikováno v:
physica status solidi (a). 212:851-854
We present a method for determining the diffusion lengths of Ga adatoms on GaN by combining profiling of the tops of GaN stripes obtained by selective area MOCVD and a diffusion growth model. We deduce very high values of the diffusion lengths on top
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ff36d83652907a68e017f2d8cf5b58e
https://doi.org/10.1002/pssa.201431912
https://doi.org/10.1002/pssa.201431912
Autor:
V. V. Lundin, V. Yu. Davydov, M. A. Yagovkina, Alexander N. Smirnov, V. V. Ratnikov, M. M. Rozhavskaya, M. P. Shcheglov, E. E. Zavarin, R. N. Kyutt
Publikováno v:
Crystallography Reports. 58:953-958
The structure of short-period hexagonal GaN/AlN superlattices (SLs) has been investigated by X-ray diffraction. The samples have been grown by metalorganic vapor-phase epitaxy (MOVPE) in a horizontal reactor at a temperature of 1050°C on (0001)Al2O3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af63915724f27de14db05f2eca5b2003
https://doi.org/10.1134/s1063774513070109
https://doi.org/10.1134/s1063774513070109
Autor:
V. V. Lundin, S. I. Troshkov, M. M. Rozhavskaya, A. F. Tsatsul’nikov, Pavel N. Brunkov, E. E. Zavarin
Publikováno v:
Semiconductors. 47:437-442
The influence of the carrier gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN in stripe windows oriented along the crystallographic direction 〈 $\bar 1$ 100〉 GaN for various widths of the mask between t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::710a553154a58b68e3c62620c95e0e12
https://doi.org/10.1134/s1063782613030226
https://doi.org/10.1134/s1063782613030226
Autor:
M. M. Rozhavskaya, W. V. Lundin, Pavel N. Brunkov, S. I. Troshkov, E. E. Zavarin, Andrey E. Nikolaev, Andrey F. Tsatsulnikov
Publikováno v:
physica status solidi c. 10:373-376
In this study we investigate the possibility of a-GaN ELOG process and its peculiarities for stripes of various orientations. It is shown that stripe orientation allows governing such important parameters of ELOG-process as lateral growth rate, voids
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2a22cb041c954a007c68cc12456091d
https://doi.org/10.1002/pssc.201200545
https://doi.org/10.1002/pssc.201200545
Autor:
M. M. Rozhavskaya, W. V. Lundin, Valery Yu. Davydov, Mariya A. Yagovkina, Pavel N. Brunkov, E. E. Zavarin, S. I. Troshkov, E. Y. Lundina, Andrey F. Tsatsulnikov
Publikováno v:
physica status solidi c. 10:441-444
In this paper we obtained GaN and InGaN nanowires on AlN/Si (111) templates via pulsed Metal Organic Chemical Vapour Deposition (MOCVD). The growth modes were investigated, in which selective growth is possible. The impact of NH3 flow and TMG flow an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6119e1ca93e363415a969ece3504ca90
https://doi.org/10.1002/pssc.201200630
https://doi.org/10.1002/pssc.201200630
Autor:
M. M. Rozhavskaya, R. N. Kyutt, W. V. Lundin, V. Yu. Davydov, E. E. Zavarin, Mikhail B. Smirnov, M. A. Yagovkina, Alexander N. Smirnov, Evgenii M. Roginskii, Yu. E. Kitaev
Publikováno v:
physica status solidi (a). 210:484-487
We report on the first observation of folded acoustic phonons in the Raman spectra of short-period AlN/GaN superlattices (SLs). The values of longitudinal and transverse sound velocities along the [0001] direction of SL were estimated. It is shown th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36544c50fbac5b3bd493c076e5b160f5
https://doi.org/10.1002/pssa.201200700
https://doi.org/10.1002/pssa.201200700
Autor:
W. V. Lundin, Pavel N. Brunkov, Andrey E. Nikolaev, M. A. Yagovkina, M. M. Rozhavskaya, Roman Talalaev, A.V. Lobanova, A. F. Tsatsul’nikov, D. Yu. Kazantsev, B. Ya. Ber
Publikováno v:
Journal of Crystal Growth. 352:209-213
Possibility of AlN growth by MOVPE in a planetary reactor with high growth rate was investigated. Growth was performed on (0001) Al2O3 substrates at the reactor pressure of 100 mbar. It was shown that deposition rate is close to diffusion limit at lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::128707e70e511b8cd6c0113888d9849a
https://doi.org/10.1016/j.jcrysgro.2011.11.045
https://doi.org/10.1016/j.jcrysgro.2011.11.045
Publikováno v:
Technical Physics Letters. 37:735-738
Specific features of gallium nitride (GaN) selective growth by MOVPE in round windows has been studied. It is established that a decrease in the flux of ammonia results in an increase in the lateral size of crystallites, while the minimum studied flu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5624e5d2728334f9b0ebca1f1e96aeb
https://doi.org/10.1134/s1063785011080104
https://doi.org/10.1134/s1063785011080104
Autor:
Alexander N. Smirnov, A. V. Sakharov, W. V. Lundin, V. Yu. Davydov, S. I. Troshkov, M. M. Rozhavskaya, E. Yu. Lundina
Publikováno v:
Technical Physics Letters. 40:372-374
The possibilities of a new method of growing gallium nitride nano- and microwire crystals using continuous titanium films with a thickness of 10–30 nm during growth are described. It is shown that this method can provide growth of high-quality GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faaf9094354ffc14024a92be2b854060
https://doi.org/10.1134/s1063785014050125
https://doi.org/10.1134/s1063785014050125