Zobrazeno 1 - 2
of 2
pro vyhledávání: '"M. M. Putyato"'
Publikováno v:
Proceedings of Tomsk State University of Control Systems and Radioelectronics. 24:23-28
The article presents the security analysis of locally stored enduser data, as well as the specifics of working with them in the application called “Signal” based on Android OS. The investigated version 5.3.12 was the most recent one up to the tim
GaSb/InGaAsSb/GaSb SINGLE AND MULTIPLE QUANTUM WELLS: OPTICAL PROPERTIES ENGINEERING AND APPLICATION
Autor:
E. Sorokin, I. T. Sorokina, V. V. Preobrazhenskii, M. M. Putyato, A. A. Kovalyov, N. N. Rubtsova, O. P. Pchelyakov
Publikováno v:
International Journal of Nanoscience. :315-318
MBE growth of GaSb / InGaAsSb / GaSb heterostructures of high crystal quality is performed under continual RHEED control. Transmission spectra of the films forming multiple quantum wells in λ ≈ 2–3 μm region confirm possibility to control optic