Zobrazeno 1 - 10
of 29
pro vyhledávání: '"M. M. Pavlov"'
Autor:
E. V. Goncharova, M. M. Pavlova
Publikováno v:
Вестник Кемеровского государственного университета, Vol 24, Iss 5, Pp 576-584 (2022)
The present research featured the social structure of the Pskov Province in the 1760s. The cities of Pskov and Velikiye Luki were the two most densely populated areas in the region, but this study also covered the less populated Gdov urban area. The
Externí odkaz:
https://doaj.org/article/862baf68b8c949c98a40ccb207c531d9
Autor:
Nikolai A. Maleev, Yu. M. Zadiranov, A. P. Vasil’ev, V. M. Ustinov, A. G. Kuzmenkov, A. G. Gladyshev, D. E. Nazaruk, M. M. Pavlov, M. M. Kulagina, A. S. Shulenkov, M. A. Bobrov, Sergey A. Blokhin, S. I. Troshkov, A. M. Nadtochiy
Publikováno v:
Semiconductors. 47:993-996
Single-spatial-mode semiconductor vertical-cavity surface-emitting lasers (VCSELs) with a non-planar upper (output) dielectric distributed Bragg reflector (DBR) for the 850 nm spectral region are fabricated. The suggested design provides stable singl
Autor:
A. G. Kuzmenkov, V. M. Ustinov, S. A. Blokhin, Innokenty I. Novikov, M. M. Pavlov, A. Yu. Egorov, V. V. Stetsenko, M. A. Bobrov, L. Ya. Karachinsky, Nikolai A. Maleev, Yu. M. Zadiranov
Publikováno v:
Semiconductors. 47:844-848
The effect of the level of internal and external optical losses on the dynamic characteristics of vertical-cavity surface-emitting lasers (VCSELs) in the spectral region of 850 nm is studied. It is shown that an increase in optical losses leads to a
Autor:
Levon V. Asryan, M. M. Pavlov, N. V. Kryzhanovskaya, Alexey E. Zhukov, A. Yu. Egorov, F. I. Zubov, Mikhail V. Maximov
Publikováno v:
Semiconductors. 45:530-535
A method for enhancing the temperature stability of injection lasers that is based on introducing asymmetric barrier layers on each side of the quantum-confined active region is suggested. The asymmetric barrier layers prevent electrons from escaping
Publikováno v:
Semiconductors. 44:857-860
The optical properties of quaternary GaNxAsyP1 − x − y semiconductor alloys grown on a GaP (100) substrate surface are studied by photoluminescence spectroscopy in the temperature range 20–300 K and by photoluminescence excitation spectroscopy
Autor:
N. V. Kryzhanovskaya, M. A. Yagovkina, G. A. Valkovsky, W. V. Lundin, N. A. Cherkachin, Andrey E. Nikolaev, M. M. Pavlov, A. V. Sakharov, S. O. Usov, A. F. Tsatsul’nikov, M. J. Hÿtch
Publikováno v:
Semiconductors. 44:828-834
The results of the study of structural and optical properties of short-period InGaN/GaN superlattices synthesized by MOCVD on sapphire substrates are presented. To form the superlattices, the method of periodic interruption of the growth of the InGaN
Autor:
M. M. Kulagina, A. G. Fefelov, Nikolai A. Maleev, Yu. M. Zadiranov, K. A. Vashanova, A. G. Kuzmenkov, A. G. Gladyshev, S. A. Blokhin, A. A. Blokhin, A. P. Vasil’ev, V. M. Ustinov, M. M. Pavlov, M. A. Bobrov, D. E. Nazaruk
Publikováno v:
Journal of Physics: Conference Series. 572:012036
A new intracavity-contacted design to realize temperature and polarization-stable high-speed single-mode 850 nm vertical cavity surface emitting lasers (VCSELs) grown by molecular-beam epitaxy is proposed. Temperature dependences of static and dynami
Publikováno v:
Тонкие химические технологии, Vol 12, Iss 5, Pp 28-33 (2017)
In this paper, we consider methods for producing artificial latexes based on butadiene-styrene thermoplastic elastomer in the presence of cationic surfactants, as well as their mixtures with nonionic and silicone surfactants. The obtained results are
Externí odkaz:
https://doaj.org/article/dafdd48fdfed44a68c9c67574fc29a92
Autor:
M. M. Pavlov
Publikováno v:
Combustion, Explosion, and Shock Waves. 17:347-350
Autor:
M. M. Pavlov
Publikováno v:
Combustion, Explosion, and Shock Waves. 13:754-762