Zobrazeno 1 - 10
of 19
pro vyhledávání: '"M. M. Nassary"'
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:10278-10286
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe3dd72483dd361e070154ab8885636d
https://doi.org/10.1007/s10854-022-08016-z
https://doi.org/10.1007/s10854-022-08016-z
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:27625-27635
In this work, a series compositions of [(0.95−x)(Bi0.5Na0.3K0.2)TiO3–xSrTiO3–0.05(Ba0.8Ca0.2) TiO3] Pb-free ceramics (0.0 ≤ x ≤ 0.2) abbreviation (BKNT–ST–BCT) were synthesized by conventional sintering method. Effect of ST addition on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ce27c5338ecc8c137d4b3fbac768237
https://doi.org/10.1007/s10854-021-07136-2
https://doi.org/10.1007/s10854-021-07136-2
Publikováno v:
Journal of Electronic Materials. 48:2940-2949
Lead-free (1 − x)(Ba0.95Ca0.05)TiO3–xBaWO4 (abbreviation BCT–BW) (x = 0, 0.01, 0.015, and 0.02) composite ceramics have been synthesized by the sol gel method with subsequent thermal treatment at 1000°C/1200°C as calcined/sintering temperatur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18189251dcb95e46fc7b6e95ab0fe77e
https://doi.org/10.1007/s11664-019-07044-6
https://doi.org/10.1007/s11664-019-07044-6
Publikováno v:
Material Science Research India. 2:107-114
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dc7131030596280648c3c23c16fd462
https://doi.org/10.13005/msri/020210
https://doi.org/10.13005/msri/020210
Autor:
M. M. Nassary
Publikováno v:
Journal of Alloys and Compounds. 398:21-25
The electrical conductivity and the Hall effect were measured on a SnS single crystal, grown by the Bridgman method over the temperature range 141–523 K, in two crystallographic directions. The investigated sample was found to be of p-type conducti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::605b8422877710a2f33dbdd3571c3c7b
https://doi.org/10.1016/j.jallcom.2005.02.025
https://doi.org/10.1016/j.jallcom.2005.02.025
Publikováno v:
physica status solidi (a). 199:464-470
In the present study, single crystals of defect semiconductor In2Te5 were grown by the Bridgman technique. An investigation was made on the Hall effect, electrical conductivity and thermoelectric power of In2Te5 monocrystal in the temperature ranging
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::605cba3a497ba65c126232761ca9ff47
https://doi.org/10.1002/pssa.200306657
https://doi.org/10.1002/pssa.200306657
Publikováno v:
Semiconductor Science and Technology. 11:516-520
Electrical conductivity, Hall effect and thermoelectric power measurements are made for the compound . This compound, which is a semiconductor grown in a single-crystal form, is studied over a wide range of temperature from 150 to 375 K. The crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7054038d4c957eaf54e5288742ce96b
https://doi.org/10.1088/0268-1242/11/4/009
https://doi.org/10.1088/0268-1242/11/4/009
Publikováno v:
Crystal Research and Technology. 31:359-364
Measurements of the electrical conductivity, Hall effect, thermoelectric power were carried out in a wide temperature range (from about 170 to 475 K) for Ga 2 Se compound grown in single crystalline form. The present investigation revealed unusual ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f60e04a3db28d4385e343897796f267c
https://doi.org/10.1002/crat.2170310315
https://doi.org/10.1002/crat.2170310315
Autor:
G. A. Gamal, M. M. Nassary
Publikováno v:
Crystal Research and Technology. 31:315-321
Thermoelectric power (TEP) of Tl 2 Te 3 was measured in the temperature range from 150 to 480 K. The crystal was found to have a p-type conductivity throughout the whole range of temperature. The effective masses of holes and electrons were determine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f0e315d03f46b752458ca7cfdcdc1f0
https://doi.org/10.1002/crat.2170310309
https://doi.org/10.1002/crat.2170310309
Publikováno v:
Physica Status Solidi (a). 145:151-155
An investigation of the switching effect in InTe shows that the switching parameters (Ith, Uth, Pth, Eth, and Roff/Ron) are sensitive to temperature, light intensity, and sample thickness as well. The I-U characteristic is symmetric with respect to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5703c06c6125c0fcee61fd5b25c7cd9c
https://doi.org/10.1002/pssa.2211450114
https://doi.org/10.1002/pssa.2211450114