Zobrazeno 1 - 10
of 167
pro vyhledávání: '"M. M. Kulagina"'
Autor:
N. V. Kryzhanovskaya, I. A. Melnichenko, A. S. Bukatin, A. A. Kornev, N. A. Filatov, S. A. Shcherbak, A. A. Lipovskii, A. S. Dragunova, M. M. Kulagina, A. I. Likhachev, M. V. Fetisova, I. V. Reduto, M. V. Maximov, A. E. Zhukov
Publikováno v:
Technical Physics Letters. 48:74-77
Autor:
A. E. Zhukov, E. I. Moiseev, A. M. Nadtochii, A. S. Dragunova, N. V. Kryzhanovskaya, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyi, F. I. Zubov, M. V. Maksimov
Publikováno v:
Technical Physics Letters. 47:685-688
Autor:
A. A. Serin, M. M. Kulagina, G. O. Kornyshov, Nikolay A. Kalyuzhnyy, A. S. Payusov, N. Yu. Gordeev, Mikhail V. Maximov, Alexey E. Zhukov, Alexey M. Nadtochiy, Sergey A. Mintairov, Yu. M. Shernyakov
Publikováno v:
Semiconductors. 55:333-340
Edge-emitting lasers with active regions based on novel InGaAs/GaAs quantum heterostructures of transitional dimensionality, i.e., quantum well-dots, which are intermediate in properties between quantum wells and quantum dots, are studied. It is show
Autor:
Anna S. Dragunova, Alexey M. Nadtochiy, Sergey A. Mintairov, N. V. Kryzhanovskaya, F. I. Zubov, Svetlana A. Kadinskaya, Nikolay A. Kalyuzhnyy, M. V. Maximov, Eduard Moiseev, Alexey E. Zhukov, M. M. Kulagina, Yury Berdnikov
Publikováno v:
IEEE Journal of Quantum Electronics. 56:1-8
We discuss the effect of self-heating on performance of injection microdisk lasers operating in continuous-wave (CW) regime at room and elevated temperature. A model is developed that allows one to obtain analytical expressions for the peak optical p
Autor:
S. A. Kadinskaya, N. V. Kryzhanovskaya, Anna S. Dragunova, F. I. Zubov, Eduard Moiseev, A. M. Nadtochii, Alexey M. Mozharov, M. M. Kulagina, Mikhail V. Maximov, O. I. Simchuk, Alexey E. Zhukov
Publikováno v:
Technical Physics Letters. 46:783-786
AlGaAs/GaAs microdisk lasers with InAs/InGaAs quantum dots have been transferred to the surface of a silicon wafer using an indium solder. The microlasers have a common electric contact deposited on top of the residual n+-GaAs substrate and individua
Autor:
N. A. Kalyuzhnyy, N. V. Kryzhanovskaya, Mikhail V. Maximov, S. A. Mintairov, Eduard Moiseev, M. M. Kulagina, Alexey E. Zhukov, Alexey M. Nadtochiy, A. A. Kharchenko
Publikováno v:
Technical Physics Letters. 46:629-632
The feasibility of detecting the emission of a microdisk laser with a diameter of 23 μm with an active region based on InGaAs/GaAs quantum well-dots using a nearby photodetector (100 × 4000 μm) with a similar active region is demonstrated. For con
Autor:
M. M. Kulagina, Alexey E. Zhukov, Eduard Moiseev, Nikolay A. Kalyuzhnyy, N. V. Kryzhanovskaya, Sergey A. Mintairov, Alexey M. Nadtochiy, Mikhail V. Maximov
Publikováno v:
Semiconductors. 54:677-681
A model is developed that makes it possible to analytically determine the threshold current of a microdisk laser with consideration for its self-heating as a function of the ambient temperature and the microlaser diameter. It is shown that there exis
Autor:
Eduard Moiseev, S. A. Mintairov, A. M. Nadtochii, N. V. Kryzhanovskaya, N. A. Kalyuzhnyi, M. V. Maximov, M. M. Kulagina, Alexey E. Zhukov, F. I. Zubov
Publikováno v:
Technical Physics Letters. 46:515-519
The operation speed of microdisk lasers with quantum dots working at room temperature without thermal stabilization has been experimentally examined, and the widest modulation bandwidth of microdisks with various diameters has been calculated. It was
Autor:
N. V. Kryzhanovskaya, Mircea Guina, M. M. Kulagina, A. E. Zhukov, O. I. Simchuk, S. A. Kadinskaya, Mikhail V. Maximov, Eduard Moiseev
Publikováno v:
Semiconductors. 54:263-267
The results of comparative analysis of the spectral and threshold characteristics of room-temperature injection microdisk lasers of the spectral range 1.2×× μm with different active regions, notably, InGaAsN/GaAs quantum wells or InAs/InGaAs/GaAs
Autor:
Mikhail V. Maximov, A. A. Serin, G. V. Voznyuk, A. S. Payusov, M. I. Mitrofanov, M. M. Kulagina, G. O. Kornyshov, N. Yu. Gordeev, V. P. Evtikhiev
Publikováno v:
Semiconductors. 54:1811-1813
We present an approach for the treatment of coupled-ridge lasers using focused ion beam (FIB) etching. We show experimentally that the FIB etching allows post-processing lateral mode tuning without deterioration of the main laser parameters.