Zobrazeno 1 - 2
of 2
pro vyhledávání: '"M. M. Krymko"'
Autor:
I. O. Mayboroda, M. M. Krymko, J. V. Grishchenko, S.V. Korneev, M. L. Zanaveskin, I. A. Chernykh, S.M. Romanovskiy, I. S. Ezubchenko, A. A. Andreev, V.F. Sinkevich, M. Y. Chernykh
Publikováno v:
Technical Physics Letters. 46:211-214
GaN heterostructures on silicon substrates have been grown by metalorganic chemical vapor deposition. Transistors with the gate periphery of 1.32 mm are designed. The saturation power of the package die at a frequency of 1 GHz was 4 and 6.3 W at supp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e74585a50d94feb1e0113dcdc0c75bd
https://doi.org/10.1134/s1063785020030050
https://doi.org/10.1134/s1063785020030050
Publikováno v:
Russian Microelectronics. 42:517-524
Opportunities of the use of an XMD-300 diffractometer in three mapping schemes have been considered, namely, grazing primary beam, grazing diffracted beam, and the θ-2θ scheme, for the study of crystal perfection of semiconductor heterostructures (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f039694ca4b12b18f5a0db4b01aa6bd
https://doi.org/10.1134/s1063739713080106
https://doi.org/10.1134/s1063739713080106