Zobrazeno 1 - 10
of 956
pro vyhledávání: '"M. M. Frank"'
Publikováno v:
ECS Solid State Letters. 2:N8-N10
Autor:
M M, Frank
Publikováno v:
Pediatric Clinics of North America. 47:1339-1354
The complement proteins play an important role in innate immunity, promoting inflammation and microbial killing. They play a role in the adaptive immune response, as well. Inherited total deficiencies of complement proteins are extremely rare. Table
Publikováno v:
The Journal of Immunology. 156:749-757
Intravenous Ig, composed principally of IgG, prevents complement attack by inhibiting C3 and C4 uptake onto target cells and tissues. Using two different models, Ab-sensitized SRBC and BSA-anti BSA solid phase immune complexes, we have examined the c
Publikováno v:
Journal of Structural Chemistry. 37:76-83
A potential function is suggested to describe the interaction of the calcium ion with the water molecule using the tetrahedral model of the water molecule. Monte Carlo simulations of small clusters Ca(H2O)n (n≤20) and analyses of the resulting F-st
Publikováno v:
The Journal of Immunology. 147:1823-1830
It has been reported that the Fc gamma R-mediated phagocytic activity of polymorphonuclear leukocytes (PMN) from patients with acute bacterial infections is markedly enhanced when compared with healthy controls. Inasmuch as several potent cytokines a
Publikováno v:
The Journal of Immunology. 147:265-272
Freshly explanted monocytes phagocytosing IgG antibody-coated erythrocyte targets (EIgG) release a factor(s) that stimulates phagocytosis by neighboring monocytes and polymorphonuclear leukocytes (PMN). Culture supernatants obtained after 30-min incu
Autor:
Huiling Shang, J. A. Ott, Kathryn W. Guarini, Stephen W. Bedell, X. Wang, J. O. Chu, M. M. Frank, Evgeni Gusev, M. Gribelyuk, Meikei Ieong
Publikováno v:
Advanced Microelectronics ISBN: 9783540714903
This chapter reviews the progress and current critical issues on the integration of germanium (Ge) surface channel MOSFET devices as well as strained Ge buried channel MOSFET structures. The device design and scalability of the strained Ge buried cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb546602f440e268b0f598af96b3bd0b
https://doi.org/10.1007/978-3-540-71491-0_14
https://doi.org/10.1007/978-3-540-71491-0_14
Autor:
A. Fontcuberta i Morral, J. M. Zahler, Harry A. Atwater, M. M. Frank, Y. J. Chabal, P. Ahrenkiel, M. Wanlass
Publikováno v:
MRS Proceedings. 768
A study of the interfacial properties of wafer bonded InP/Si is presented. The electrical properties are measured by bonding InP to Si with different doping concentrations and by measuring the current voltage characteristics of the bonded pairs. Two