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pro vyhledávání: '"M. M. Faktor"'
Autor:
M. M. Faktor, J. L. Stevenson
Publikováno v:
Journal of The Electrochemical Society. 125:621-629
Two methods of anodically etching have been investigated. Subsequently they have been used to detect crystallographic defects present in bulk‐grown, single crystal material. The first method provides topographical featuring of the semiconductor ano
Autor:
M. M. Faktor, T. Ambridge
Publikováno v:
Journal of Applied Electrochemistry. 4:135-142
The depletion layer capacitance of n-type gallium arsenide was measured as a function of its anodic potential in an electrochemical cell. It was shown that these measurements can lead to accurate values of carrier concentration, and are compatible wi
Autor:
M. M. Faktor, T. Ambridge
Publikováno v:
Journal of Applied Electrochemistry. 5:319-328
A fully automatic system which directly plots semiconductor carrier concentration profiles to any required depth is described. An electrolytic Schottky barrier permits simultaneous controlled dissolution and capacitance-voltage measurements. Examples
Publikováno v:
Journal of Physics and Chemistry of Solids. 34:235-239
An electric field applied along the polar axis of the molecular crystal meta-nitroaniline causes a change in the optical transmission at the band edge between 505 and 540 nm. The size of the incremental change was found to vary linearly with applied
Autor:
M. M. Faktor, D. C. Bradley
Publikováno v:
Journal of Biochemical Toxicology. 9:435-439
The thermal stabilities of Zr(OEt)4, Zr(OPrf)4, Zr(OBut)4 and Zr(OC5H11-tert.)4 have been studied in an all-glass apparatus under constant pressure at various temperatures and pressures. Most work was carried out on the tertiary alkoxides and these e
Publikováno v:
Journal of Crystal Growth. 9:3-11
The role of diffusion in the growth of crystals from the gas phase has been investigated quantitatively. The dependence of growth rate on variations in gas composition and temperature profile have been determined for a simple system. It has been foun
Autor:
M. M. Faktor, R. Hanks
Publikováno v:
Trans. Faraday Soc.. 63:1130-1135
The heats of reaction of arsenic with fifteen group 3A metals have been measured by means of dynamic differential calorimetry. The heats of formation obtained at the reaction temperatures, in kcal/mole, are as follows: ScAs, –65.2 ± 6.0; YAs, –7
Publikováno v:
Journal of Applied Electrochemistry. 3:1-15
A method for determining the carrier concentration of n-type gallium arsenide by an electrochemical technique is described. The minority carrier diffusion length is also obtained, and using subsidiary measurements the minority carrier lifetime can be
Autor:
M. M. Faktor, R. Hanks
Publikováno v:
Trans. Faraday Soc.. 63:1122-1129
Since the technique of dynamic differential calorimetry (D.D.C.) was first described in 1958 little further work has been carried out. We show that the method is capable of measuring heat changes as small as 1 cal with an accuracy of ± 4 %. The sens
Autor:
M. M. Faktor
Publikováno v:
The Journal of Physical Chemistry. 66:1003-1006