Zobrazeno 1 - 10
of 63
pro vyhledávání: '"M. M. El Gomati"'
Publikováno v:
Electron Microscopy and Analysis 1997 ISBN: 9781003063056
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::872a8d7e6edab93a22b405ec5ecb5443
https://doi.org/10.1201/9781003063056-68
https://doi.org/10.1201/9781003063056-68
Autor:
A.-K. Thamm, J. Wei, J. Zhou, C. G. H. Walker, H. Cabrera, M. Demydenko, D. Pescia, U. Ramsperger, A. Suri, A. Pratt, S. P. Tear, M. M. El-Gomati
Publikováno v:
Applied Physics Letters, 120 (5)
We simulate the electronic system of ejected electrons arising when a tip, positioned few 10 nm away from a surface, is operated in the field emission regime. We find that, by repeated quantum reflections (“quantum skipping”), electrons produced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0cfda1ac22b27d49097970364066032c
Publikováno v:
Surface and Interface Analysis. 49:34-46
A new form of charged particle energy analyser is proposed. It is broadly based on the 180° magnetic spectrograph, but is intended to detect charged particles moving out of the dispersion plane with a helical motion. The analyser has the capability
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6af43033b07c5307bc8a52d689134b94
https://doi.org/10.1002/sia.6055
https://doi.org/10.1002/sia.6055
Publikováno v:
Microscopy of Semiconducting Materials 2001 ISBN: 9781351074629
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8c55312e33ad5b7b1ac727022031e7d
https://doi.org/10.1201/9781351074629-93
https://doi.org/10.1201/9781351074629-93
Publikováno v:
Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanoengineering and Nanosystems. 222:95-99
Carbon nanotubes (CNTs) have been determined to be field emitters of high quality, but CNTs produced by chemical vapour deposition can produce emission currents with high instability and noise. This work finds that adsorbates and amorphous carbon dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40fb8335f6e31cdb521dd08874e87ec1
https://doi.org/10.1243/17403499jnn146
https://doi.org/10.1243/17403499jnn146
Publikováno v:
Scanning. 30:2-15
The electron backscattering factor was measured from 24 different elements at low primary beam energy (250-5,000 eV). The results were compared with Monte Carlo simulations from a variety of freely available programs and an in-house developed program
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2977bf273a45c595d3dbea57b2f69801
https://doi.org/10.1002/sca.20091
https://doi.org/10.1002/sca.20091
Publikováno v:
Microelectronic Engineering. 87:1491-1493
This paper acts as an introduction to carbon nanotubes (CNTs). Chemical vapour deposition (CVD) is detailed together with a summary of their applications in electronics. Among the most promising applications is in field emission. The morphology can b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c2a83d2e85de1c4c82fde08635dd7f2
https://doi.org/10.1016/j.mee.2009.11.072
https://doi.org/10.1016/j.mee.2009.11.072
Publikováno v:
Review of Scientific Instruments. 70:2282-2287
This article describes a new kind of electrostatic charged particle analyzer capable of the parallel detection of a large kinetic energy range. The main purpose envisaged is for the simultaneous detection of electrons scattered from surfaces and havi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c073f7026e68585d7d8ecad082dac02e
https://doi.org/10.1063/1.1149753
https://doi.org/10.1063/1.1149753
Publikováno v:
Journal of Crystal Growth. 179:320-323
By using HBr H 3 PO 4 K 2 Cr 2 O 7 solution, bevels through InP-based structures were prepared. On InP/InGaAsP structure the bevel angles in the range 3 × 10 −5 to 2 × 10 −4 rad were obtained with good linearity of the bevel profile. The depend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::478f945c56094a13a1a6db7a68857aa4
https://doi.org/10.1016/s0022-0248(97)00176-0
https://doi.org/10.1016/s0022-0248(97)00176-0
Publikováno v:
Materials Science and Engineering: B. 47:127-130
By using H 3 PO 4 /H 2 O 2 /H 2 O etchant bevels through GaAs based structures were prepared. The bevels had angles lower than 5×10 −4 rad and good profile linearity. For the bevel surface observation optical interference microscopy was used.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d42bee255cdec85c419da4979bcfe3a1
https://doi.org/10.1016/s0921-5107(97)00024-x
https://doi.org/10.1016/s0921-5107(97)00024-x