Zobrazeno 1 - 10
of 51
pro vyhledávání: '"M. M. Bülbül"'
International Congress on Semiconductor Materials and Devices (ICSMD) -- AUG 17-19, 2017 -- -- Selcuk Univ, Konya, TURKEY
WOS: 000495858400009
In order to good interpret the conduction mechanism in the Al/P3HT/p-Si (MPS) structure, both the
WOS: 000495858400009
In order to good interpret the conduction mechanism in the Al/P3HT/p-Si (MPS) structure, both the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2405f44072abd9b005a5fcfc02056a61
https://avesis.gazi.edu.tr/publication/details/62a189f2-9824-4c42-9f47-6c547e290d12/oai
https://avesis.gazi.edu.tr/publication/details/62a189f2-9824-4c42-9f47-6c547e290d12/oai
Publikováno v:
Journal of Materials Science: Materials in Electronics. 28:3987-3996
Au/C20H12/n-Si SBD was fabricated and its characteristic parameters such as reverse-saturation current (Io), ideality factor (n), zero-bias barrier height (Φbo), series and shunt resistances (Rs, Rsh) were found as 1.974 × 10−7 A, 6.434, 0.351 eV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::136d3d7e1cabe7810c02cc947fe3e2c3
https://doi.org/10.1007/s10854-016-6011-2
https://doi.org/10.1007/s10854-016-6011-2
Autor:
M. M. Bülbül, S. Bengi
Publikováno v:
Current Applied Physics. 13:1819-1825
The temperature dependence of capacitance–voltage ( C – V ) and conductance–voltage ( G / w – V ) characteristics of Al/HfO 2 / p -Si metal-oxide-semiconductor (MOS) device has been investigated by considering the effect of series resistance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc74b863deb71d3866748f19b526c355
https://doi.org/10.1016/j.cap.2013.07.004
https://doi.org/10.1016/j.cap.2013.07.004
Publikováno v:
Surface and Interface Analysis. 43:1561-1565
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d80ffd9fa66876ce99e89f8fb50a371a
https://doi.org/10.1002/sia.3749
https://doi.org/10.1002/sia.3749
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 266:791-796
WOS: 000255318700014 The effect of the C-60(o) (gamma-ray) exposure oil the electrical characteristics of Al/SiO2/p-Si (MIS) structures has been investigated using capacitance-voltage (C - V) and conductance-voltage (G/omega - V) measurements. The MI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9bb46d5fe117df6beb1d96e6d590a159
https://doi.org/10.1016/j.nimb.2008.01.017
https://doi.org/10.1016/j.nimb.2008.01.017
Publikováno v:
Radiation Physics and Chemistry. 77:74-78
The effect of 60 Co (γ-ray) irradiation on the electrical properties of Au/SnO 2 /n-Si (MIS) structures has been investigated using the capacitance–voltage ( C – V ) and conductance–voltage ( G / ω − V ) measurements in the frequency range
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74b29d5c6ee0e66fbea63b370cea0dcf
https://doi.org/10.1016/j.radphyschem.2007.02.006
https://doi.org/10.1016/j.radphyschem.2007.02.006
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 568:863-868
It is well known that the exposure of any semiconductor surfaces to the Co-60 gamma-ray irradiation causes electrically active defects. To investigate the effect of gamma-ray irradiation dose on the electrical characteristics of metal-insulator-semic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba72bb8b7908a03e80b45591365f1a35
https://doi.org/10.1016/j.nima.2006.08.047
https://doi.org/10.1016/j.nima.2006.08.047
Publikováno v:
Microelectronic Engineering. 83:577-581
WOS: 000236318700028
The temperature dependence of capacitance-voltage (C-V) and conductance-voltage (G/w-V) characteristics of metal-insulator-semiconductor (Al/Si3N4/P-Si) Schottky barrier diodes (SBDs) was investigated by considering series r
The temperature dependence of capacitance-voltage (C-V) and conductance-voltage (G/w-V) characteristics of metal-insulator-semiconductor (Al/Si3N4/P-Si) Schottky barrier diodes (SBDs) was investigated by considering series r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8895bfe2ebfdd284ad426b29d67f4f49
https://doi.org/10.1016/j.mee.2005.12.013
https://doi.org/10.1016/j.mee.2005.12.013
Publikováno v:
Microelectronic Engineering. 83:499-505
In order to interpret in detail the experimentally observed current-voltage-temperature (I-V-T) and capacitance-voltage-temperature (C-V-T) results of Al/p-Si metal-semiconductor Schottky barrier diodes (SBDs) we have been examined the samples in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::368090312f9af73f4747dc0f0f94b69a
https://doi.org/10.1016/j.mee.2005.11.014
https://doi.org/10.1016/j.mee.2005.11.014
Publikováno v:
Microelectronic Engineering. 81:140-149
The electrical and dielectric properties of Al/SiO2/p-Si (MOS) structures were studied in the frequency range 10 kHz-10 MHz and in the temperature range 295-400 K. The interfacial oxide layer thickness of 320 A between metal and semiconductor was cal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a690427993605240d7a764ae68805674
https://doi.org/10.1016/j.mee.2005.04.008
https://doi.org/10.1016/j.mee.2005.04.008