Zobrazeno 1 - 10
of 32
pro vyhledávání: '"M. M. A. Hakim"'
Autor:
M M A Hakim
Publikováno v:
Engineering Research Express. 5:025017
We perform a rigorous study on the conduction characteristics of long, low doped and relatively thick p-type silicon nanowire (SiNW) with different bias polarities/strengths to find out the origin of the non-linear electrical characteristics and to f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c8d691a1170b7b6642ecc27cfb43721
https://doi.org/10.1088/2631-8695/accad3
https://doi.org/10.1088/2631-8695/accad3
Autor:
M M A Hakim
Publikováno v:
Engineering Research Express. 5:015072
We report a low-cost mass manufacturable route for polysilicon nanowire (NW) fabrication through comparative investigations of spacer etch techniques to realize nanowires from amorphous silicon (α-Si) layer. The process uses thin film technology and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e19ffc7eee0c1ce9126e147789b25087
https://doi.org/10.1088/2631-8695/acc310
https://doi.org/10.1088/2631-8695/acc310
Publikováno v:
2020 IEEE Region 10 Symposium (TENSYMP).
In this paper, the variation of trigger and hold voltages of electrostatic discharge (ESD) snapback of a 20 nm grounded-gate NMOS (GGNMOS) are analyzed by changing different parameters such as the p-well doping, gate workfunction, drain to body conta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db2f3cc710489f39b86517b38d844924
https://doi.org/10.1109/tensymp50017.2020.9230678
https://doi.org/10.1109/tensymp50017.2020.9230678
Publikováno v:
2019 1st International Conference on Advances in Science, Engineering and Robotics Technology (ICASERT).
We perform a feasibility study on the application of thin film polycrystalline silicon (polysilicon) nanowires for gas sensing application upon exposure into different gas ambient. The nano-sensors are developed in a relatively cheap reactive ion etc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f6fc4175038afca4e24d67aec407ec3
https://doi.org/10.1109/icasert.2019.8934643
https://doi.org/10.1109/icasert.2019.8934643
Publikováno v:
2018 10th International Conference on Electrical and Computer Engineering (ICECE).
This paper investigates effects of interface states and grain boundary defects on the electrical characteristics and provides insight into the nature of interface states and grain boundary defects of polysilicon nanowires (NWs) prepared by industry s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7983f56d7dc8d27bb903281df5fca02
https://doi.org/10.1109/icece.2018.8636707
https://doi.org/10.1109/icece.2018.8636707
Publikováno v:
2017 IEEE Region 10 Humanitarian Technology Conference (R10-HTC).
We report a feasibility study of using silicon (Si) nanowire (NW) as a tunable biosensor through substrate bias arrangement. 75nm, 50nm and 25nm thick Si NWs having channel length of 1pm with doping concentrations of 1016/cm3, 1017/cm3 and 1018/cm3 r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bed8c8002bfe650b455e4cb95a493a4c
https://doi.org/10.1109/r10-htc.2017.8288934
https://doi.org/10.1109/r10-htc.2017.8288934
Publikováno v:
2016 9th International Conference on Electrical and Computer Engineering (ICECE).
We investigate the bias dependent modulation of the electrical characteristics of poly-silicon nanowire and perform a feasibility study of poly-silicon nanowire for biosensing application using liquid gate arrangement. Electrical characteristics of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b33eb47749a0377489242f295b954a7
https://doi.org/10.1109/icece.2016.7853892
https://doi.org/10.1109/icece.2016.7853892
Publikováno v:
JOURNAL OF COMPUTATIONAL ELECTRONICS
Drain current multiplication in vertical MOSFETs due to body isolation by the drain depletion region and gate---gate charge coupling is investigated at pillar thicknesses in the range of 200---10 nm. For pillar thickness >120 nm depletion isolation d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce2ab8d79e7d2b7d63bb91f170c1985d
https://eprints.soton.ac.uk/403184/
https://eprints.soton.ac.uk/403184/
Publikováno v:
ECS Journal of Solid State Science and Technology. 2:P42-P45
In this work, we investigate the effect of oxide cap layer on the metal-induced lateral crystallization (MILC) of amorphous silicon. The MILC is characterized at temperatures in the range 550 to 428°C using Nomarski optical microscopy and Raman spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67c4d1aae5ee6c5e105eb48272ca5283
https://doi.org/10.1149/2.038301jss
https://doi.org/10.1149/2.038301jss
Publikováno v:
ECS Journal of Solid State Science and Technology. 1:P94-P99
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c99368f9927705e15d81ce262f54c5f9
https://doi.org/10.1149/2.023202jss
https://doi.org/10.1149/2.023202jss