Zobrazeno 1 - 10
of 70
pro vyhledávání: '"M. Loubradou"'
Publikováno v:
Philosophical Magazine. 89:413-434
The square dislocation network of a (0 0 1) buried small-angle boundary in silicon was observed by dark-field transmission electron microscopy to examine the structures of more than 100 dissociated dislocation segments. Images were taken with g = (2
Publikováno v:
Interface Science. 12:187-195
A VC doped WC-Co alloy is investigated using high resolution transmission electron microscopy. The VC grain growth inhibitor induces the presence of a thin layer on the surfaces of the WC grains in contact with Co and precipitates in the corners of C
Autor:
M. Loubradou, S. Lay
Publikováno v:
Philosophical Magazine. 83:2669-2679
The microstructure of the WC phase in submicron WC-Co alloys has been investigated by transmission electron microscopy. The existence of clusters formed by several grains mainly related by Σ =1 and Σ=2 high-coincidence orientation relationships is
Autor:
Roland Bonnet, M. Loubradou
Publikováno v:
physica status solidi (a). 194:173-191
A directionally solidified Al 2 Cu(θ) crystal (body centred tetragonal lattice, a = 0.6063 nm, c = 0.4872 nm) grown along the c axis has been observed by transmission electron microscopy (TEM) to investigate the solidification defects. In a first st
Publikováno v:
Philosophical Magazine A. 80:2233-2256
The deformation generated by the intrinsic structure of facetted close-packed (111)Ni3Al//(010)Ni3Nb interfaces has been observed by high resolution electron microscopy. The interfaces separate Ni3Al (γ') and Ni3Nb) (δ) lamellae of a directionally
Publikováno v:
physica status solidi (a). 178:681-700
Linear singularities at or near close-packed {111 }γ∥(0001)α 2 interfaces in two-phase γ-α 2 alloys play a crucial role in the plastic deformation at submicron scale. This paper presents an analysis of their atomic structures by high resolution
Publikováno v:
physica status solidi (a). 174:403-411
The structure of the InAs/GaAs(001) epitaxial heterointerface is observed by high resolution electron microscopy (HREM) along [110] when there is a slight long range angular misorientation between the two crystals around the common observation direct
Publikováno v:
The European Physical Journal Applied Physics. 2:157-161
A (111)NiSi 2 //(115)Si heterotwin interface has been observed by high resolution electron microscopy (HREM) along the common direction [110]NiSi 2 //[110]Si to identify the long period atomic structural units (ASU's). Coexistence of two different st
Publikováno v:
Thin Solid Films. 304:256-266
As potential anti-oxidation coatings, several AlN Si 3 N 4 codeposits have been grown by chemical vapour deposition at low pressure (LPCVD) in a vertical hot-wall reactor on silicon carbide (SiC) layers. Transmission electron microscopy (TEM) studies
Autor:
M. Loubradou
Publikováno v:
Philosophical Magazine Letters. 74:1-8
The defect content of small GaAs islands grown by molecular-beam epitaxy on a Si (001) substrate is investigated using high-resolution electron microscopy. The smallest non-defect-free islands contain stair-rod dislocations (SRDs) with Burgers vector