Zobrazeno 1 - 3
of 3
pro vyhledávání: '"M. Longo 1"'
Autor:
R. Mantovan 1, R. Fallica 1, A. Mokhles Gerami 2, 3, T. E. Mølholt 2, C. Wiemer 1, M. Longo 1, H. P. Gunnlaugsson 4, K. Johnston 2, H. Masenda 5, D. Naidoo 5, M. Ncube 5, K. Bharuth-Ram 6, 7, M. Fanciulli 1, 8, H. P. Gislason 4, G. Langouche 9, S. Ólafsson 4, G. Weyer 10
Publikováno v:
Scientific Reports
Scientific reports (Nature Publishing Group) 7 (2017): 8234. doi:10.1038/s41598-017-08275-5
info:cnr-pdr/source/autori:R. Mantovan 1, R. Fallica 1,11, A. Mokhles Gerami 2,3, T. E. Mølholt 2, C. Wiemer 1, M. Longo 1, H. P. Gunnlaugsson 4, K. Johnston 2, H. Masenda 5, D. Naidoo 5, M. Ncube 5, K. Bharuth-Ram 6,7, M. Fanciulli 1,8, H. P. Gislason 4, G. Langouche 9, S. Ólafsson 4 & G. Weyer 10/titolo:Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films/doi:10.1038%2Fs41598-017-08275-5/rivista:Scientific reports (Nature Publishing Group)/anno:2017/pagina_da:8234/pagina_a:/intervallo_pagine:8234/volume:7
Mantovan, R, Fallica, R, Gerami, A M, Molholt, T E, Wiemer, C, Longo, M, Gunnlaugsson, H P, Johnston, K, Masenda, H, Naidoo, D, Ncube, M, Bharuth-Ram, K, Fanciulli, M, Gislason, H P, Langouche, G, Olafsson, S & Weyer, G 2017, ' Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films ', Scientific Reports, vol. 7, 8234 . https://doi.org/10.1038/s41598-017-08275-5
Scientific Reports, Vol 7, Iss 1, Pp 1-12 (2017)
Scientific reports (Nature Publishing Group) 7 (2017): 8234. doi:10.1038/s41598-017-08275-5
info:cnr-pdr/source/autori:R. Mantovan 1, R. Fallica 1,11, A. Mokhles Gerami 2,3, T. E. Mølholt 2, C. Wiemer 1, M. Longo 1, H. P. Gunnlaugsson 4, K. Johnston 2, H. Masenda 5, D. Naidoo 5, M. Ncube 5, K. Bharuth-Ram 6,7, M. Fanciulli 1,8, H. P. Gislason 4, G. Langouche 9, S. Ólafsson 4 & G. Weyer 10/titolo:Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films/doi:10.1038%2Fs41598-017-08275-5/rivista:Scientific reports (Nature Publishing Group)/anno:2017/pagina_da:8234/pagina_a:/intervallo_pagine:8234/volume:7
Mantovan, R, Fallica, R, Gerami, A M, Molholt, T E, Wiemer, C, Longo, M, Gunnlaugsson, H P, Johnston, K, Masenda, H, Naidoo, D, Ncube, M, Bharuth-Ram, K, Fanciulli, M, Gislason, H P, Langouche, G, Olafsson, S & Weyer, G 2017, ' Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films ', Scientific Reports, vol. 7, 8234 . https://doi.org/10.1038/s41598-017-08275-5
Scientific Reports, Vol 7, Iss 1, Pp 1-12 (2017)
The underlying mechanism driving the structural amorphous-to-crystalline transition in Group VI chalcogenides is still a matter of debate even in the simplest GeTe system. We exploit the extreme sensitivity of 57Fe emission Mössbauer spectroscopy, f
Autor:
M. Begotti 1, M. Longo 1, R. Magnanini 1, A. Parisini 1, L. Tarricone 1, C. Bocchi 2, L. Lazzarini 2, L. Nasi 2, M. Geddo 3
Publikováno v:
info:cnr-pdr/source/autori:M. Begotti 1, M. Longo 1, R. Magnanini 1, A. Parisini 1, L. Tarricone 1, C. Bocchi 2, L. Lazzarini 2, L. Nasi 2, M. Geddo 3/congresso_nome:10th Europeam Workshop on Metalorganic Vapour Phase Epitaxy/congresso_luogo:Lecce/congresso_data:8-11 Giugno 2003/anno:2003/pagina_da:/pagina_a:/intervallo_pagine
The Al-free InGaP/GaAs heterostructure is an interesting alternative to AlGaAs/GaAs system in a wide range of micro- and optoelectronic applications [1-3]. Nevertheless, the required ML-abruptness of both normal and inverse InGaP-GaAs interfaces is n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::b3aab2ae0557700997ef25658858cf38
Autor:
M. Longo 1, N. Lovergine 1, A. M. Mancini 1, A. Passaseo 1, G. Leo 2, M. Mazzer 2, M. Berti 3, A. V. Drigo 3
Publikováno v:
Applied physics letters 72 (1998): 359–361.
info:cnr-pdr/source/autori:M. Longo 1; N. Lovergine 1, A. M. Mancini 1; A. Passaseo 1; G. Leo 2; M. Mazzer 2; M. Berti 3; A. V. Drigo 3/titolo:Self-organized growth of ZnTe nanoscale islands on (001)GaAs/doi:/rivista:Applied physics letters/anno:1998/pagina_da:359/pagina_a:361/intervallo_pagine:359–361/volume:72
info:cnr-pdr/source/autori:M. Longo 1; N. Lovergine 1, A. M. Mancini 1; A. Passaseo 1; G. Leo 2; M. Mazzer 2; M. Berti 3; A. V. Drigo 3/titolo:Self-organized growth of ZnTe nanoscale islands on (001)GaAs/doi:/rivista:Applied physics letters/anno:1998/pagina_da:359/pagina_a:361/intervallo_pagine:359–361/volume:72
The Stransky-Krastanow metalorganic vapor phase epitaxy growth of self-organized ZnTe islands on homoepitaxial ~001!GaAs is demonstrated. The 27.4% lattice mismatch of the ZnTe/GaAs heterostructure leads to a strain-driven distribution of nanoscale Z
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::43ea215d2cd98daa386e28f93590abc7
https://publications.cnr.it/doc/176321
https://publications.cnr.it/doc/176321