Zobrazeno 1 - 3
of 3
pro vyhledávání: '"M. Lingunis"'
Autor:
James JH Chen, M. Randolph, M. Clopton, S. Brown, E. Dharmarajan, I. Burki, K. Ohtsuka, J. Guan, G. Goodwin, N. Yazdani, H. Shiraiwa, M. Lingunis, T. Kamal, O. Karlsson, B. Banerjee
Publikováno v:
2007 International Symposium on Semiconductor Manufacturing.
In this paper, we describe the characterization and optimization of thick resist in 90 nm flash memory processing to improve sector-edge cell threshold voltage (Vt) uniformity. It was observed that upon high-energy implantation, edge footing of thick
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1296d2da9d1d5226c92fb6a3c9c790f4
https://doi.org/10.1109/issm.2007.4446876
https://doi.org/10.1109/issm.2007.4446876
Publikováno v:
MRS Proceedings. 198
Selective area Epitaxy (SE) of high quality GaAs on Si films has been achieved using conventional MOCVD and Atomic Layer Epitaxy (ALE) nucleation techniques. Epitaxial GaAs films were deposited inside windows etch patterned in the oxide coated Si waf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d46b2dc560222b833d44695883b292ec
https://doi.org/10.1557/proc-198-39
https://doi.org/10.1557/proc-198-39
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