Zobrazeno 1 - 10
of 81
pro vyhledávání: '"M. Lentze"'
Autor:
M Lentze, Joachim Spranger, Beat Steinmann, Georg F. Hoffmann, Marianne Rohrbach, Fred Zepp, Gabor Matyas
Publikováno v:
Pädiatrie ISBN: 9783642546716
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab7f6ea04880a58c7a385318597ec698
https://doi.org/10.1007/978-3-642-54671-6_296-2
https://doi.org/10.1007/978-3-642-54671-6_296-2
Autor:
L. C. Smith, M Lentze, James Davies, Maciej Wiater, S. J. Bingham, Daniel Wolverson, Tomasz Wojtowicz, G. Karczewski, J. Geurts
Publikováno v:
Journal of the Korean Physical Society. 53:2787-2791
The first coherent Raman electron spin resonance (ESR) results obtained in dilute magnetic semiconductor quantum wells are presented and the sensitivity and selectivity of the coherent Raman-detected ESR (CRESR) technique for probing the local enviro
Publikováno v:
physica status solidi c. 4:3297-3309
We report on the lattice dynamics of abrupt and intermixed interfaces of II-VI-layers and quantum dots, studied by Raman spectroscopy from embedded CdSe monolayers in BeTe, and from CdSe quantum dots in ZnSe. It is demonstrated that the best CdSe/BeT
Autor:
M. Eyring, A. Avdonin, M. Lentze, C. Kehl, R. R. Gałązka, W. Ossau, Le Van Khoi, G. V. Astakhov, J. Geurts
Publikováno v:
physica status solidi (b). 244:1680-1684
Zn 1-x Mn x Te crystals (0 ≤ x ≤ 0.30) have been grown by the high pressure Bridgman technique. The free exciton energy of Zn 1-x Mn x Te was determined from the photoluminescence and reflectance measurements in the temperature range from 1.7 to
Publikováno v:
International Journal of Modern Physics B. 21:1632-1637
We report on the analysis of the influence of carrier concentration on the exchange coupling between conduction band electrons and Mn d-electrons in diluted magnetic semiconductors. For this analysis we employed (i) electronic spin-flip Raman spectro
Publikováno v:
physica status solidi c. 3:1118-1121
The influence of carrier concentration on electronic spin flip transitions in the conduction band of heavily doped diluted magnetic semiconductors is analysed experimentally by spin flip Raman spectroscopy (SFRS). Bulk-like (Zn,Mn)Se epitaxial layers
Autor:
Peter Kordos, Damian Radziewicz, Rudolf Srnanek, Jaroslav Kováč, B. Sciana, J. Geurts, M. Lentze, M. Florovic, Andrej Vincze, Marek Tłaczała, D.S. Mc Phail, Daniel Donoval, Gert Irmer
Publikováno v:
Thin Solid Films. 497:7-15
We present a new method of determining the depth profile of the doping concentration in Si δ-doped GaAs layers and GaAs-based heterostructures by micro-Raman spectroscopy. In-depth resolution is obtained by scanning the laser spot along a shallow be
Autor:
Daniel Donoval, Gert Irmer, M. Lentze, B. Sciana, Damian Radziewicz, Ivan Novotny, Marek Tłaczała, Rudolf Srnanek, M. Florovic, J. Geurts
Publikováno v:
Applied Surface Science. 243:96-105
The properties of the photoexcited plasma in n-GaAs and its influence on micro-Raman spectra were studied on bevelled structures. The modes of the photoexcited free-carriers plasmon–LO–phonon (PLP) coupling have been detected in the surface deple
Autor:
Daniel Donoval, Gert Irmer, M. Lentze, B. Sciana, Marek Tłaczała, P Brdecka, Damian Radziewicz, Rudolf Srnanek, J. Geurts, A Förster, Peter Kordos
Publikováno v:
Applied Surface Science. 230:379-385
Si δ-doped GaAs layers were studied by micro-Raman spectroscopy. The spectra were recorded along the bevelled structure using the light of Ar + -ion laser (514.5 nm line) with high power density. The observed changes in the Raman spectra are discuss