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Akademický článek

Caractérisation électrique et optique des diodes électroluminescentes

Autor: T. Tibermacine, H. Tabbi, Z. Ogbi, H. Hasni, M. Ledra, N. Ouhabab

Publikováno v: Revue des Énergies Renouvelables, Vol 18, Iss 3, Pp 487 – 492-487 – 492 (2015)

L’objectif de notre travail expérimental est d’extraire les caractéristiques électriques et optiques de deux diodes électroluminescentes à longueurs d’ondes différentes à savoir 565 nm et 612 nm. Pour cette raison, nous avons développé

Externí odkaz: https://doaj.org/article/2933705d3b004726ac0ab28921ff6cce

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Simulation of Carrier Trapping in an Embedded Nanowire and Its Effect in the Nano-EBIC Technique

Autor: M. Ledra, A. El Hdiy

Publikováno v: Semiconductors. 55:56-60

Effect of an isolated Ge nanowire embedded in an n-doped Si on electron beam induced current is simulated by a Monte Carlo calculation algorithm. A circular nano-contact is used to collect the current generated by the use of primary energy of 5 or 10

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a80551f540b91f068d171ed1a5460caf
https://doi.org/10.1134/s106378262101005x

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Simulated Contrast of Two Dislocations

Autor: M. Ledra, A. El Hdiy

Publikováno v: Fizika i tekhnika poluprovodnicov / Semiconductors
Fizika i tekhnika poluprovodnicov / Semiconductors, MAIK Nauka/Interperiodica, 2019, 53 (4), pp.442-446. ⟨10.1134/S1063782619040195⟩

A three-dimensional Monte Carlo simulation algorithm is used to study the contrast of two dislocations perpendicular to the irradiated surface of an n-doped silicon sample in the electron beam induced current mode. The dislocations are positioned in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8385207a9d23838f4ffe8744c6db8dfd
https://hal.archives-ouvertes.fr/hal-03163477

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Maximum Bite Force of Edentulous Patients before and after Dental Implant Rehabilitation: Long-Term Follow-Up and Facial Type Influence

Autor: Ana Cláudia Moreira Melo, Ingrid M. Ledra, Edivaldo Romano Coró, Ivete Aparecida de Mattias Sartori, Rogéria Acedo Vieira

Publikováno v: Journal of Prosthodontics. 27:523-527

Purpose (1) To evaluate patients’ long-term maximum bite force (MBF) after rehabilitation with mandibular implant-supported prosthesis, (2) to assess the influence of facial pattern in MBF, and (3) to evaluate the relation between the dominant chew

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9163ce23c499dbfdf669426e5d5b9b13
https://doi.org/10.1111/jopr.12544

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Simulated contrast of two dislocations -=SUP=-*-=/SUP=

Autor: A. El Hdiy, M. Ledra

Publikováno v: Журнал технической физики. 53:466

AbstractA three-dimensional Monte Carlo simulation algorithm is used to study the contrast of two dislocations perpendicular to the irradiated surface of an n -doped silicon sample in the electron beam induced current mode. The dislocations are posit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aa739658293180d635e763038e56aba7
https://doi.org/10.21883/ftp.2019.04.47440.8943

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Monte Carlo simulation of the EBIC collection efficiency of a Schottky nanocontact

Autor: M. Ledra, Nouar Tabet

Publikováno v: Superlattices and Microstructures. 45:444-450

We have used a Monte Carlo (MC) algorithm to simulate the Electron Beam Induced Current (EBIC) collection efficiency of a nano-sized Schottky contact of radius r c perpendicular to the incident electron beam. The surface area around the metallic cont

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::549b8075823872a48c3861b126eac30a
https://doi.org/10.1016/j.spmi.2008.10.013

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Monte Carlo simulation of the contrast of SEM charge-collection images of dislocations in semiconductors

Autor: M. Ledra, Nouar Tabet

Publikováno v: Journal of Physics D: Applied Physics. 38:3845-3849

We describe a Monte Carlo algorithm that we have developed to simulate the electron beam induced current (EBIC) contrast of a surface perpendicular dislocation. The contrast was obtained by simulating the random diffusion and collection of the carrie

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d3f0b584fc1b8eed8876da382f3f20fd
https://doi.org/10.1088/0022-3727/38/21/002

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Monte carlo simulation of the EBIC grain boundary contrast in semiconductors

Autor: Nouar Tabet, M. Ledra

Publikováno v: Materials Science and Engineering: B. 42:181-184

The electron beam induced current (EBIC) recombination contrast of grain boundaries (GB) is calculated by means of a Monte Carlo simulation algorithm. After considering a pointlike generation source, a three-dimensional distribution of pointlike sour

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::de46904a9ef264341e635101b629e840
https://doi.org/10.1016/s0921-5107(96)01703-5

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Akademický článek

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Extraction of the defect density of states in microcrystalline silicon from experimental results and simulation studies

Autor: T. Tibermacine, M. Ledra, Amar Merazga, N. Ouhabab

Publikováno v: Journal of Semiconductors. 36:093001

The constant photocurrent method in the ac-mode (ac-CPM) is used to determine the defect density of states (DOS) in hydrogenated microcrystalline silicon (μc-Si:H) prepared by very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7ec5c0f1a74a7d58da9bfa85cdb25bfa
https://doi.org/10.1088/1674-4926/36/9/093001

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