Zobrazeno 1 - 10
of 59
pro vyhledávání: '"M. Lagadas"'
Autor:
Alexandru Muller, C. Buiculescu, Andrei A. Muller, A. K. Pantazis, Zacharias Hatzopoulos, Mircea Dragoman, Dan Vasilache, George Konstantinidis, I. Petrini, Dan Neculoiu, M. Lagadas
Publikováno v:
Journal of Micromechanics and Microengineering. 15:S53-S59
This paper presents the design and fabrication of micromachined GaAs membrane supported millimeter-wave passive circuits. A new type of coupled line band-pass filter demonstrator structure for millimeter-wave applications was designed and fabricated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::994af7affa1d6848f53005ebfde7bac5
https://doi.org/10.1088/0960-1317/15/7/008
https://doi.org/10.1088/0960-1317/15/7/008
Autor:
Dan Vasilache, Alexandru Muller, Dan Neculoiu, M. Lagadas, George Konstantinidis, George Deligeorgis
Publikováno v:
Journal of Micromechanics and Microengineering. 13:353-358
In this paper, we describe the design, manufacturing and characterization of a monolithically integrated micromachined millimeter-wave receiver module. The antenna array, the matching network, and the GaAs Schottky diode are supported on a thin GaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::565e39e5f5087f4c3cc0d6e4d6851dce
https://doi.org/10.1088/0960-1317/13/3/301
https://doi.org/10.1088/0960-1317/13/3/301
Autor:
Pierre Blondy, G. Constantinidis, Romolo Marcelli, D. Dascalu, Dan Neculoiu, Giancarlo Bartolucci, Sergiu Iordanescu, F. Giaccomozzi, George Deligeorgis, Dan Vasilache, M. Lagadas, I. Petrini, Alexandru Muller, C. Buiculescu
Publikováno v:
Journal of Micromechanics and Microengineering. 11:301-305
This paper presents the fabrication processes for micromachined millimetre-wave devices, on two different types of semiconductor substrates. The first process uses micromachining on high-resistivity oriented silicon. A three-layer dielectric membrane
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeefa3009a38184bed2ab3feed10f344
https://doi.org/10.1088/0960-1317/11/4/302
https://doi.org/10.1088/0960-1317/11/4/302
Publikováno v:
Materials Science and Engineering: B. 80:164-167
In this study we investigate the appearance of etch pits and their effect on the ECV doping profiles of PM-HEMT structures grown by MOCVD and MBE. In some samples, etch-pits were observed after the etching of only 20 nm of the top layer. The observed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5262707d721030a91e0688482551a483
https://doi.org/10.1016/s0921-5107(00)00611-5
https://doi.org/10.1016/s0921-5107(00)00611-5
Autor:
Demetrios Anglos, E. Neyret, M. Lagadas, L. Di Cioccio, P. Vicente, Julien Pernot, Jean-Marie Bluet, Thierry Billon
Publikováno v:
Materials Science and Engineering: B. 80:332-336
We report an experimental investigation of the deposition, optical characterization and electrical properties of 6H and 4H-SiC epitaxial layers grown by atmospheric pressure chemical vapor deposition in a home made ‘cold wall’ reactor. From a gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dcdf7134a41ede864c56d8a700cb043
https://doi.org/10.1016/s0921-5107(00)00659-0
https://doi.org/10.1016/s0921-5107(00)00659-0
Publikováno v:
Materials Science and Engineering: B. 80:257-261
The planar doped barrier diodes are majority carrier devices with technologically controlled barrier height. This paper reviews the main current conducting mechanisms. The limits of the I–V characteristics are described. The design of the device is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6fb28135e408b918d388a1ce7b352af
https://doi.org/10.1016/s0921-5107(00)00650-4
https://doi.org/10.1016/s0921-5107(00)00650-4
Autor:
G. Halkias, Alexandros Georgakilas, Y. Moisiadis, E.D. Kyriakis-Bitzaros, N. Haralabidis, M. Lagadas
Publikováno v:
Journal of Lightwave Technology. 19:1532-1542
A detailed comparison of optoelectronic versus electrical interconnections for system-on-chip applications is performed in terms of signal latency and power consumption. Realistic end-to-end models of both interconnection schemes are employed in orde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62156ba19b5e1c51d8d974b8da105ad7
https://doi.org/10.1109/50.956141
https://doi.org/10.1109/50.956141
Publikováno v:
Materials Science Forum. :735-738
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7594ef808b4aa7c85660462cc66db754
https://doi.org/10.4028/www.scientific.net/msf.353-356.735
https://doi.org/10.4028/www.scientific.net/msf.353-356.735
Publikováno v:
Materials Science and Engineering: B. 66:141-145
In the context of a comparative study of MBE and MOCVD PM-HEMT structures on 3″ GaAs substrates, utilization of photoreflectance indicated that the technique can provide substantial information both non-destructively as well as at room temperature.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15de932bfca9f8324a284418deb325e8
https://doi.org/10.1016/s0921-5107(99)00134-8
https://doi.org/10.1016/s0921-5107(99)00134-8
Publikováno v:
Materials Science and Engineering: B. 66:92-96
This work presents a comparison of DC, RF and power characteristics at high frequency as well as a comparison of the uniformity of these parameters across each wafer in pseudomorphic high electron mobility transistor structures grown by MBE and MOCVD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bc7be744cdfe53d459fb71d863d70bd
https://doi.org/10.1016/s0921-5107(99)00091-4
https://doi.org/10.1016/s0921-5107(99)00091-4