Zobrazeno 1 - 10
of 57
pro vyhledávání: '"M. L. POLIGNANO"'
Autor:
L. Di Piazza, I. Mica, L. Laurin, F. Sammiceli, M. Mariani, A. G. Mauri, E. Ricci, M. L. Polignano, G. Spoldi
Publikováno v:
Materials Science and Engineering: B. :168-172
In this work the role of the Si substrate in the high energy boron implantation damage recovering is studied. The boron implants were carried out in Czochralski grown (1 0 0) polished Si substrates as well as in epitaxial Si layers grown on (1 0 0) S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98ba05fd876bd9e19aa8c3f4b024f515
https://doi.org/10.1016/j.mseb.2008.05.022
https://doi.org/10.1016/j.mseb.2008.05.022
Autor:
F. Cazzaniga, G. Pavia, A. G. Mauri, F. Sammiceli, M. Mariani, M. L. Polignano, G. Spoldi, I. Mica, V. Bontempo
Publikováno v:
Journal of Materials Science: Materials in Electronics. 19:182-188
In this article the phenomenology related to the mechanisms of defect generation in Shallow Trench Isolation (STI) processes is discussed, and the role of the structure pattern is investigated. Defect formation is studied by plan and cross TEM analys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86e8dd24ab0c78002f98f32abd0685cf
https://doi.org/10.1007/s10854-008-9630-4
https://doi.org/10.1007/s10854-008-9630-4
Publikováno v:
physica status solidi c. 4:2992-2996
One of the most critical issues of the STI process is the reduction of the stress generation during the oxidation steps. This stress can create defects later on in the process, leading to increased leakage. In this work microscopy analyses confirm th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fd22bab734b2964e206cf9bc0d07bbe
https://doi.org/10.1002/pssc.200675478
https://doi.org/10.1002/pssc.200675478
Publikováno v:
IEEE Transactions on Electron Devices. 54:1108-1114
In this paper, the paper addressed the problem of estimating the risk of crystal defect generation in a complex device process. The validity of numerical calculations of the mechanical stress developed in the device process flow is assessed by compar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dd77784728f55dacd0d16b52c1b5d1d
https://doi.org/10.1109/ted.2007.892948
https://doi.org/10.1109/ted.2007.892948
Publikováno v:
Materials Science and Engineering: B. :349-353
In this work the leakage current of junctions with a self-aligned cobalt silicide is studied. It is shown that junctions with a self-aligned CoSi2 layer show a leakage current excess which is strongly reduced by increasing the PAI energy. This indica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21cd2bea6db538de2e35e40e1547af6f
https://doi.org/10.1016/j.mseb.2005.08.125
https://doi.org/10.1016/j.mseb.2005.08.125
Publikováno v:
The European Physical Journal Applied Physics. 27:435-438
In this work. we address the problem of identifying the minimum temperature required to diffuse copper deposited at the silicon surface into the bulk. and to identify a suitable method to detect the initial stages of copper electrical activity at waf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db692501337a88fbf04cfb721b8fe25e
https://doi.org/10.1051/epjap:2004138
https://doi.org/10.1051/epjap:2004138
Autor:
Gian Pietro Carnevale, F. Cazzaniga, I. Mica, G. Pavia, M. Martinelli, P Ghezzi, M. L. Polignano, Emiliano Bonera, M. Brambilla
Publikováno v:
Journal of Physics: Condensed Matter. 14:13403-13410
In this paper, the correlation between dislocation density and transistor leakage current is demonstrated. The stress evolution and the generation of defects are studied as a function of the process step, and experimental evidence is given of the rol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ade8d85318b3428324db53c8d1d6540
https://doi.org/10.1088/0953-8984/14/48/395
https://doi.org/10.1088/0953-8984/14/48/395
Autor:
B. Crivelli, M. Sbetti, R. Zonca, M. Alessandri, M. L. Polignano, L. Vanzetti, A. P. Caricato, M. Bersani
Publikováno v:
Journal of Non-Crystalline Solids. 280:39-47
A newly developed technique for the simultaneous measurement of the oxide–silicon interface properties and of minority carrier lifetime in the silicon volume was used for a systematic study of the nitridation process of oxide films.This technique i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cbbf54df4d5d843bc56e32ca28fbd98
https://doi.org/10.1016/s0022-3093(00)00352-5
https://doi.org/10.1016/s0022-3093(00)00352-5
Autor:
B Padovani, M. L. Polignano, F. Cazzaniga, L Ceresara, F Pellizzer, Gabriella Ghidini, F. Illuzzi
Publikováno v:
Materials Science and Engineering: B. 73:99-105
Various substrates are compared for both bulk defect formation and thin oxide reliability. Wafers were subjected to a complete device fabrication process, and the formation of the denuded zone was monitored by SPV measurements of carrier lifetime. Ox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ca5911d01de5bdccd8eab21d42fc2a4
https://doi.org/10.1016/s0921-5107(99)00443-2
https://doi.org/10.1016/s0921-5107(99)00443-2
Autor:
E Bellandi, M. L. Polignano, A. Sabbadini, G. Queirolo, F Zanderigo, F Pipia, D Lodi, Francesco Priolo
Publikováno v:
Scopus-Elsevier
In this paper we present a systematic comparison among the most common methods (surface photovoltage, Elymat and microwave-detected photoconductive decay) for lifetime measurements. The possibility to identify contaminants and to quantitatively evalu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26e8cbfbfcab28df8c198e72d974cc59
https://doi.org/10.1016/s0921-5107(98)00192-5
https://doi.org/10.1016/s0921-5107(98)00192-5