Zobrazeno 1 - 2
of 2
pro vyhledávání: '"M. L. O'Neil"'
Publikováno v:
Surface and Coatings Technology. 200:3127-3133
Resistance of low dielectric constant (low- k ) dielectrics, deposited using Diethoxymethylsilane (DEMS) precursor and helium (He) carrier gas with or without oxygen (O 2 ) reaction gas, against heat, moisture stress and chemical treatment is clarifi
Autor:
Chyung Ay, M. L. O'Neil, Yi-Lung Cheng, You-Lin Wu, Ying-Lang Wang, M. S. Feng, J. K. Lan, Chee-Wee Liu, Chuan-Pu Liu
Publikováno v:
Thin Solid Films. :681-687
The low dielectric constant (low-k) of organo-silica-glass (OSG) and fluorine-incorporated OSG (OFSG) materials produced from plasma-enhanced chemical vapor deposition of trimethylsilane are thermally stable to greater than 600 °C. FTIR analysis ind